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Nexperia Low Saturation Voltage NPN Bipolar Transistor 2 A, 50 V, 3-Pin SOT-23 PBSS4350T,215

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Nexperia Low Saturation Voltage NPN Bipolar Transistor 2 A, 50 V, 3-Pin SOT-23 PBSS4350T,215

Name: Nexperia Low Saturation Voltage NPN Bipolar Transistor 2 A, 50 V, 3-Pin SOT-23 PBSS4350T,215
Brand: Nexperia
SKU: 193812
Price: 0.16 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	PBSS4350T,215
Width	2.5mm
Mount Type	Surface
Series	PBSS4350T
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	50V
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	1.2W
Maximum DC Collector Current Idc	2A
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
onsemi Transistor, 2 A NPN, 50 V dc, 3-Pin DPAKBrand	onsemi

Key Features

This transistor features a maximum DC collector current of 2 A.
It supports a maximum collector-emitter voltage of 50 V and a maximum collector base voltage of 50 V.
The device is housed in a compact surface mount SOT-23 package with three pins for easy PCB integration.
Power dissipation is rated at 1.2 W, enabling reliable operation in moderate power scenarios.
Designed with a minimum DC current gain hFE of 100, ensuring amplification efficiency.
Capable of operating within a temperature range from -65°C to 150°C.
Maximum transition frequency (ft) is 100 MHz, suitable for high-frequency applications.
Low saturation voltage reduces losses and heat generation, improving overall circuit efficiency.

Product Description

The Nexperia PBSS4350T,215 is a low saturation voltage NPN bipolar junction transistor supplied in a compact 3-pin SOT-23 package. It exhibits a maximum DC collector current of 2 A and collector-emitter voltage of 50 V, making it suitable for various switching and amplification tasks in electronic circuits.

This transistor provides high efficiency through its low collector-emitter saturation voltage, which reduces on-state losses and heat generation, allowing for more robust and reliable operation in digital and switching applications.

The device supports a wide operating temperature range from -65°C to 150°C, suitable for challenging industrial and commercial environments. Its minimum DC current gain (hFE) of 100 ensures good amplification performance, while the maximum transition frequency of 100 MHz enables use in moderately high-frequency circuits.

The SOT-23 surface mount package offers a space-saving and easy-to-mount form factor for modern PCB designs, featuring dimensions of approximately 3 mm length, 2.5 mm width, and 1.1 mm height.

RoHS compliant and manufactured in China, this transistor is widely used in industrial electronics, power management systems, telecommunications, and consumer electronics requiring efficient switching capabilities.

Maximum DC collector current: 2 A. Maximum collector-emitter voltage: 50 V. Package type: 3-pin SOT-23 surface mount. Maximum power dissipation: 1.2 W. Minimum DC current gain (hFE): 100. Operating temperature range: -65°C to 150°C.

Maximum transition frequency: 100 MHz. Low saturation voltage enhances efficiency. RoHS compliant, made in China.

This product is suitable for applications in industrial electronics, telecommunications, switching regulators, and general-purpose amplification. Explore the comprehensive range of Bipolar Transistors and related components at EnvMart to find compatible parts for your projects and production lines.