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STMicroelectronics PNP Darlington Transistor SOT-32 4A 100V 40W 3-Pin BD682

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STMicroelectronics PNP Darlington Transistor SOT-32 4A 100V 40W 3-Pin BD682

Name: STMicroelectronics PNP Darlington Transistor SOT-32 4A 100V 40W 3-Pin BD682
Brand: STMicroelectronics
SKU: 179650
Price: 0.51 USD
Availability: InStock

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Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	10.8mm
Length	7.8mm
Model	BD682
Mount Type	Through Hole
Series	BD682
Maximum Operating Temperature	150°C
Package Type	SOT-32
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	4A
Maximum Collector Emitter Voltage Vceo	100V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	750
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	2.5V
Maximum Collector Base Voltage VCBO	100V
Maximum Collector Cut-off Current	0.2mA
Maximum Power Dissipation Pd	40W
onsemi BDX54CG PNP Darlington Transistor, 8 A 100 V HFE	750, 3-Pin TO-220ABBrand: onsemi
STMicroelectronics 1 Darlington Transistor PNP, 4 A 100 V HFE	750, 3-Pin SOT-32

Key Features

Maximum continuous collector current of 4 amperes for high power applications.
Collector-emitter voltage rating up to 100 volts ensures reliability under load.
High DC current gain of 750 for efficient amplification.
Supports through-hole mount with 3-pin configuration for easy PCB integration.
Maximum power dissipation rating of 40 watts for robust performance.
Operating temperature range from -65°C to 150°C suitable for harsh environments.
Low collector-emitter saturation voltage of 2.5 V enhances efficiency.
Compact dimensions with 10.8 mm height and 7.8 mm length to save board space.

Product Description

The STMicroelectronics BD682 is a PNP Darlington Bipolar Junction Transistor housed in a through-hole SOT-32 package. It is engineered to deliver a maximum continuous collector current of 4 A and withstand a collector-emitter voltage up to 100 V, making it suitable for medium power amplification and switching applications.

This device features a high DC current gain of 750, enabling efficient current amplification in electronic circuits. The transistor's maximum power dissipation of 40 W ensures stable operation over a wide range of electrical loads.

The BD682 transistor maintains operation across an extended temperature range from -65°C to 150°C, making it fit for industrial and commercial environments including power control, motor drivers, and audio amplification circuits.

Key electrical characteristics include a maximum collector-emitter saturation voltage (VceSAT) of 2.5 V and a maximum emitter-base voltage of 5 V. Its physical dimensions of 10.8 mm in height and 7.8 mm in length make it convenient for compact designs.

The device is designed for through-hole mounting with a 3-pin SOT-32 configuration, facilitating straightforward PCB assembly and integration into discrete semiconductor applications. However, it is not certified for automotive-specific standards.

Maximum continuous collector current: 4 A. Max collector-emitter voltage: 100 V. DC current gain (hFE): 750. Power dissipation: 40 W. Operating temperature range: -65°C to 150°C. Package type: SOT-32, through-hole mount.

Transistor polarity: PNP. 3-pin configuration. Collector cut-off current: 0.2 mA max. Dimensions: Height 10.8 mm, Length 7.8 mm.

This transistor is ideal for industrial, commercial, and power amplification uses in electronic component assemblies, offering robust performance and reliable operation within specified electrical parameters.

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