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Microchip N-Channel MOSFET 140 A, 12 V, 4-Pin TO-247 MSC035SMA070B4
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC035SMA070B4 |
| Mount Type | Through Hole |
| Series | MSC035SMA070B4 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 99nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Key Features
- Boasts low capacitances and low gate charge for efficient switching.
- Designed for stable operation at high junction temperatures up to 175°C.
- Features a fast and reliable body diode improving circuit reliability.
- Superior avalanche ruggedness ensures durability under stress conditions.
- Made for through-hole mounting to facilitate easy integration.
- Compliant with RoHS standards ensuring environmental safety.
- Minimum operating temperature of -55°C enables usage in harsh environments.
- Maximum power dissipation of 1.6 W helps manage thermal loads effectively.
Product Description
Microchip MSC035SMA070B4 is a high-performance N-Channel MOSFET designed to deliver a maximum continuous drain current of 140 A and a maximum drain-source voltage of 12 V. Housed in a 4-pin TO-247 package, this device supports robust power handling suitable for various industrial, electronic, and automotive applications.
The MOSFET features low internal capacitances and low gate charge that contribute to fast switching speeds and improved energy efficiency, critical for high-frequency power conversion and motor control systems.
Engineered to maintain stable operation at a junction temperature up to 175°C, the device ensures reliability in demanding thermal environments. It also incorporates a fast and reliable body diode along with superior avalanche ruggedness, enhancing durability during transient voltage spikes or inductive load switching.
Its through-hole mount type facilitates easy installation in power electronics systems. The product complies with RoHS regulations, supporting eco-friendly manufacturing processes.
The device operates reliably over a broad temperature range from -55°C to 175°C, making it suitable for applications exposed to harsh environmental conditions. With a typical gate charge of 99 nC at Vgs and a forward voltage drop of 1.8 V, it offers optimized switching and conduction performance.
Low gate charge enables faster switching and lower energy losses. Stable operation at high junction temperatures ensures operational reliability. Superior avalanche ruggedness supports durability in high-stress scenarios.
Through-hole mounting eases assembly and maintenance operations. RoHS compliant for environmental safety considerations. Wide operating temperature range suitable for industrial applications. Reliable body diode improves circuit protection during switching.
Low drain-source resistance enhances efficiency. Maximum power dissipation of 1.6 W supports thermal management. Optimized for high current handling with 4-pin TO-247 package.
This MOSFET is ideal for use in industrial electronics, power supply designs, motor drives, and other high-current, low-voltage applications. Its robust features and compliance standards cater to modern electronic manufacturing and design requirements.
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Frequently Asked Questions
The maximum continuous drain current for the MSC035SMA070B4 is 140 A.
This MOSFET has a maximum drain-source voltage of 12 V.
It operates reliably over a temperature range from -55°C to 175°C.
The MSC035SMA070B4 is designed for through-hole mounting.
The typical gate charge at Vgs is 99 nC.
The maximum power dissipation is 1.6 W, which helps manage thermal loads effectively.
Yes, it complies with RoHS standards, ensuring environmental safety.
This model is housed in a 4-pin TO-247 package.
The forward voltage drop is 1.8 V.
The maximum gate-source voltage is 2 V.
The maximum drain-source resistance is 8 Ω.
This MOSFET is suitable for industrial electronics, power supply designs, and motor drives.
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