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ROHM IGBT Power Transistor 25 A 650 V 3-Pin TO-247GE Through Hole RGTH50TS65DGC13
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGTH50TS65DGC13 |
| Mount Type | Through Hole |
| Series | RGTH50TS65DGC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 25A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 174W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- High-speed switching with low collector-emitter saturation voltage.
- Maximum continuous collector current rated at 25 A.
- Maximum collector-emitter voltage of 650 volts supports high voltage applications.
- TO-247GE package with through hole mounting for robust mechanical stability.
- Maximum power dissipation capability of 174 W suitable for demanding industrial uses.
- Wide operating temperature range from -40°C to 175°C for versatility.
- Includes built-in very fast and soft recovery freewheeling diode (FRD) for improved switching performance.
- Lead plating is Pb-free and compliant with RoHS environmental standards.
Product Description
ROHM RGTH50TS65DGC13 is a high-performance field stop trench Insulated Gate Bipolar Transistor (IGBT) designed for fast switching applications with low collector emitter saturation voltage. This power transistor delivers a maximum continuous collector current of 25 A and can withstand voltages up to 650 V, making it suitable for industrial power electronics requiring efficient switching and high durability.
The device is packaged in a TO-247GE three-pin through hole configuration, facilitating easy mounting and stable mechanical connection in power modules, inverters, and motor drives.
Its maximum power dissipation of 174 W and wide operating temperature range from -40°C to 175°C ensure reliable performance in harsh environments, including industrial automation, HVAC systems, and renewable energy installations.
The RGTH50TS65DGC13 features a built-in very fast and soft recovery freewheeling diode (FRD) in the RFN series to reduce switching losses and improve efficiency. It complies with RoHS directives with lead-free plating, supporting environmentally friendly manufacturing standards.
This device finds wide applications in manufacturing power supplies, motor controllers, induction heating, and other high-efficiency industrial electronics. High-speed switching with low saturation voltage. Robust TO-247GE package with through-hole mount.
Wide operating temperature supports demanding industrial conditions. Built-in fast and soft recovery diode reduces switching losses. Lead-free plating and RoHS compliant for environmental safety. Explore our extensive electronics components catalog at EnvMart for reliable power semiconductors and industrial-grade electronic devices suitable for diverse applications.
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Frequently Asked Questions
The maximum continuous collector current for this model is rated at 25 A.
It can withstand a maximum collector-emitter voltage of 650 V.
This model has a maximum power dissipation capability of 174 W.
The operating temperature range for this unit is from -40°C to 175°C.
It is packaged in a TO-247GE configuration, which allows for through-hole mounting.
Yes, it includes a built-in very fast and soft recovery freewheeling diode (FRD) to reduce switching losses and improve efficiency.
This IGBT has a pin count of 3 and utilizes a through-hole mounting type.
Yes, the lead plating is Pb-free and compliant with RoHS environmental standards.
This transistor is suitable for applications in power supplies, motor controllers, induction heating, and other high-efficiency industrial electronics.
The maximum gate-emitter voltage (VGEO) for this model is ±30 V.
The country of origin for this IGBT power transistor is India.
This model belongs to the RGTH50TS65DGC13 series.
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