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ROHM Insulated Gate Bipolar Transistor IGBT, 20 A Continuous Collector Current, 650 V Collector Emitter RGTH40TS65DGC13
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGTH40TS65DGC13 |
| Mount Type | Through Hole |
| Series | RGTH40TS65DGC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 20A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 144W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Features a 3-pin TO-247GE package suitable for through hole mounting.
- Maximum power dissipation of 144 watts ensures efficient thermal handling.
- Supports a maximum gate emitter voltage of ±30 V for reliable operation.
- Low collector emitter saturation voltage of 1.6 V enhances switching performance.
- Operates reliably in temperatures ranging from -40°C to 175°C.
- Complies with RoHS standards for environmental and safety regulations.
- Includes built-in very fast and soft recovery freewheeling diode for low switching losses.
- Ideal for industrial power switching applications requiring high speed and low loss.
Product Description
ROHM RGTH40TS65DGC13 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. This device integrates a Field Stop Trench IGBT structure that provides low collector emitter saturation voltage and superior switching characteristics, making it highly efficient in power electronics.
The 3-pin TO-247GE package is designed for through hole mount applications and supports a maximum continuous collector current of 20 A at a collector emitter voltage of up to 650 V. The device dissipates up to 144 W of power, which enables it to handle substantial loads while maintaining thermal stability.
This IGBT also includes a built-in very fast and soft recovery freewheeling diode (FRD, RFN series), which reduces switching losses and improves overall system efficiency. Its gate emitter voltage rating is ±30 V, providing robustness against gate voltage transients.
Operating temperature range of -40°C to 175°C ensures this component performs reliably in harsh industrial environments. The RoHS-compliant lead plating and absence of hazardous substances comply with modern environmental standards.
ROHM RGTH40TS65DGC13 is suitable for various industrial, manufacturing, power conversion, and electronic applications where low loss, high-speed switching, and durability are critical. Its through hole package facilitates easy integration and replacement in power modules and circuits.
Features a 3-pin TO-247GE through hole mounting package. Highly efficient with low collector emitter saturation voltage of 1.6 V. Supports 20 A continuous current and 650 V voltage rating. Built-in very fast and soft recovery diode reduces switching losses.
Wide operating temperature range from -40°C to 175°C. Complies with RoHS environmental standards. Ideal for industrial power electronics and switching applications. Explore the range of semiconductor components including IGBTs and discrete transistors at EnvMart for reliable industrial performance and innovation.
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Frequently Asked Questions
The maximum continuous collector current for this model is 20 A.
It has a maximum collector emitter voltage rating of 650 V.
This IGBT can dissipate up to 144 W of power.
The device comes in a TO-247GE package suitable for through hole mounting.
It operates reliably in temperatures ranging from -40°C to 175°C.
The maximum gate emitter voltage supported by this IGBT is ±30 V.
Yes, it includes a built-in very fast and soft recovery freewheeling diode to reduce switching losses.
The maximum collector emitter saturation voltage for this model is 1.6 V.
Yes, it complies with RoHS standards for environmental and safety regulations.
The TO-247GE package has a pin count of 3.
This IGBT is suitable for various industrial, manufacturing, power conversion, and electronic applications requiring high-speed switching and low loss.
The country of origin for this model is India.
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