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Nexperia Bipolar Transistor PNP, 500 mA DC Collector Current, 45 V Collector Emitter Voltage, 3-Pin DFN1110D-3 BC807-40QB-QZ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC807-40QB-QZ
Mount Type Surface
Series BC807QB-Q
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 250
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -500mA
Transistor Configuration PNP

Key Features

  • This transistor supports a maximum DC collector current of 500 mA.
  • Rated for a maximum collector emitter voltage of 45 V providing reliable switching performance.
  • Encapsulated in an ultra small 3-pin DFN1110D-3 package with low profile at 0.5 mm height.
  • Has a minimum DC current gain (hFE) of 250, ensuring efficient signal amplification.
  • Meets the RoHS directive and is AEC-Q101 automotive standard qualified.
  • Ideal for automatic optical inspection (AOI) due to side-wettable flanks of the package.
  • Operates reliably within a temperature range from -55°C to 150°C.
  • Compact footprint suitable for dense PCB layouts requiring surface mount technology.

Product Description

The Nexperia BC807-40QB-QZ is a PNP bipolar transistor designed for general-purpose applications requiring moderate current and voltage ratings. Packaged in an ultra small, leadless DFN1110D-3 surface-mount device, it offers a low profile of 0.5 mm with side-wettable flanks compatible with automatic optical inspection systems. The transistor supports a maximum DC collector current of 500 mA and a collector emitter voltage of 45 V, making it suitable for signal amplification and switching in compact electronic assemblies.

Featuring a minimum DC current gain (hFE) of 250, it provides adequate gain performance for various control and amplification functions. The device is built to operate reliably in harsh environments, accommodating temperatures from -55°C up to 150°C, thereby suitable for automotive and industrial applications.

This transistor complies with the RoHS directive, ensuring environmental safety, and meets AEC-Q101 automotive standards, certifying qualification for automotive system use. Its compact 3-pin DFN package saves PCB space compared to traditional leaded transistors, and side-wettable flanks facilitate manufacturing quality control.

High power dissipation capability supports robust performance in demanding circuits. Multiple current gain selections optimize electrical characteristics for diverse designs. Surface mount package offers reduced PCB footprint and enhanced mechanical reliability.

Qualified for automotive-grade usage under AEC-Q101 standard. RoHS compliant, ensuring lead-free manufacturing process.

This transistor is ideal for industrial electronics, automotive control systems, instrumentation, and general-purpose amplification tasks. The small form factor and automotive qualification extend its use to compact, high-reliability environments including sensors, communicative devices, and power management circuits.

Explore more components in the Nexperia Bipolar Transistor series at EnvMart for high-quality semiconductor solutions.

Nexperia Bipolar Transistor PNP, 500 mA DC Collector Current, 45 V Collector Emitter Voltage, 3-Pin DFN1110D-3 BC807-40QB-QZ
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

It is rated for a maximum collector emitter voltage of 45 V.

This transistor has a minimum DC current gain (hFE) of 250.

It operates reliably within a temperature range from -55°C to 150°C.

The transistor is encapsulated in a 3-pin DFN1110D-3 package.

Yes, it complies with the RoHS directive, ensuring environmental safety.

It meets the AEC-Q101 automotive standard, qualifying it for automotive applications.

This model has a pin count of 3.

The maximum emitter base voltage (VEBO) is -5 V.

The configuration of this transistor is PNP.

It is suitable for applications in industrial electronics, automotive control systems, and general-purpose amplification tasks.

The country of origin for this transistor is India.

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