Microchip P-Channel Enhancement MOSFET, -640 mA, -60 V, 3-Pin TO-92 VP2206N3-G

Microchip VP2206N3-G is a P-Channel enhancement-mode MOSFET featuring a vertical DMOS architecture and manufactured using Supertex's silicon-gate process. This device is designed for applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds.

With a maximum continuous drain current of -640 mA and voltage rating of -60 V, the VP2206N3-G operates reliably under demanding electrical conditions. Encapsulated in a 3-Pin TO-92 package for easy through-hole mounting, it supports a maximum power dissipation of 0.74 W and functions efficiently from -55°C up to 150°C.

The MOSFET offers high input impedance, low input capacitance, and excellent thermal stability, making it ideal for industrial electronics, power management, and amplification systems.

Enhancement-mode vertical DMOS transistor with normally-off operation. Low power drive requirements and ease of paralleling. Integral source-to-drain diode protects against voltage spikes. Fast switching speeds suitable for power and signal applications.

Thermally robust with freedom from secondary breakdown. This product is commonly utilized in industrial electronics, semiconductor circuits, and power control modules. Explore our Electronics & Electricals category and discover a wide range of high-performance semiconductors like the VP2206N3-G MOSFET from Microchip.