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Microchip N-Channel Enhancement MOSFET, 10.3 A, 650 V, 3-Pin TO-92 TN5325K1-G

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Microchip N-Channel Enhancement MOSFET, 10.3 A, 650 V, 3-Pin TO-92 TN5325K1-G

Name: Microchip N-Channel Enhancement MOSFET, 10.3 A, 650 V, 3-Pin TO-92 TN5325K1-G
Brand: Microchip
SKU: 176767
Price: 0.8 USD
Availability: InStock

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Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin	India
Brand	Microchip
Model	TN5325K1-G
Mount Type	Through Hole
Series	TN5325
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	10.3A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	8Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	140W
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.8V

Key Features

Vertical DMOS structure providing power handling similar to bipolar transistors.
Low threshold voltage of maximum 2 V ensures efficient switching performance.
High input impedance and positive temperature coefficient prevent thermal runaway.
Rising time of 15 ns and falling time of 25 ns allow fast switching.
Maximum power dissipation rating of 140 W supports robust applications.
Wide operating temperature range from -55°C to 150°C for industrial use.
Through-hole mount type suitable for prototyping and PCB assembly.
Maximum gate source voltage rating of 30 V ensures safe gate operation.

Product Description

Microchip TN5325K1-G is a high-performance N-Channel enhancement mode MOSFET designed with a vertical DMOS structure and silicon gate technology. It supports a continuous drain current of up to 10.3 A and withstands drain source voltages up to 650 V. Its 3-pin TO-92 package supports through-hole mounting, making it suitable for various industrial, electronic, and power management applications requiring reliable switching devices.

This device features a low threshold voltage of maximum 2 V and exhibits high input impedance with a positive temperature coefficient that prevents thermal runaway and secondary breakdown commonly associated with bipolar transistors. Fast switching characteristics include a rise time of 15 nanoseconds and a fall time of 25 nanoseconds, ensuring efficient operation in switching circuits.

The transistor supports operations in a wide temperature range from -55°C up to 150°C, making it robust for industrial and commercial use. It dissipates a maximum power of 140 W, allowing it to handle demanding power applications safely. The maximum gate to source voltage rating of 30 V protects the transistor's gate in variable voltage environments. The forward voltage of 1.8 V improves the transistor's efficiency.

These attributes make the Microchip TN5325K1-G ideal for applications including power supply control, motor drivers, inverters, and other power electronics in industrial, laboratory, and manufacturing settings. The through-hole TO-92 package is convenient for prototypes and small batch productions.

Vertical DMOS structure and silicon gate technology. Low threshold voltage ensures easy turn-on. High input impedance prevents thermal issues. Fast switching times for efficient operation. Wide operating temperature range for versatility.

Robust power dissipation rating of 140 W. Through-hole TO-92 package form factor. Suitable for industrial and commercial applications. Explore comprehensive semiconductor components including MOSFETs at EnvMart to support your electronic and industrial design needs.