Infineon CoolMOS N-Channel MOSFET, 22 A, 700 V, 3-Pin TO-263 IPB65R110CFD7ATMA1

The Infineon IPB65R110CFD7ATMA1 CoolMOS N-Channel MOSFET delivers robust switching performance with a maximum continuous drain current of 22 A and a blocking voltage of up to 700 V. Packaged in a compact TO-263 3-pin surface mount, it integrates a fast body diode, improving hard-commutation ruggedness and reliability.

This device leverages advanced super junction technology to optimize efficiency and reduce power losses, making it a preferred component for industrial applications such as server power supplies, telecommunications infrastructure, solar power inverters, and electric vehicle charging stations. Its design supports higher power density and improved full-load and light-load efficiencies within switched-mode power supply (SMPS) applications.

The MOSFET's surface mount package eases PCB assembly and helps achieve compact board layouts in high performance industrial electronic systems. It provides a competitive solution that balances cost and performance effectively in power conversion circuits.

Maximum continuous drain current of 22 A ensures suitability for medium power applications. 700 V drain-source voltage rating provides substantial voltage margin for industrial environments. TO-263 package enhances thermal dissipation and mounting flexibility.

CoolMOS technology optimizes switching losses and increases efficiency. Fast body diode integration supports rugged hard commutation operations. Surface mount design facilitates automated assembly processes. Ideal for industrial power supplies, renewable energy systems, and EV charging infrastructure.

This component is a reliable choice for designers looking to enhance energy efficiency and power density in demanding electrical and electronic power management applications.

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