Infineon CoolMOS N-Channel MOSFET, 22 A, 700 V, 3-Pin TO-263 Surface Mount IPB65R110CFD7ATMA1

Infineon IPB65R110CFD7ATMA1 CoolMOS N-Channel MOSFET operates at 700 V and 22 A, housed in a 3-pin TO-263 surface mount package. This semiconductor device is engineered for demanding industrial applications such as server power supplies, telecom equipment, solar inverters, and electric vehicle charging stations.

This MOSFET features CoolMOS super junction technology, enabling significant efficiency improvements. Its integrated fast body diode allows for superior hard-commutation ruggedness and reliable performance under high switching frequencies.

The device offers an extra safety margin suitable for applications with elevated bus voltages, thereby supporting increased power density in industrial switched-mode power supplies (SMPS). It ensures both outstanding light-load and full-load efficiencies, which contribute to energy savings and thermal management.

With a maximum continuous drain current of 22 A and a maximum drain-to-source voltage of 700 V, IPB65R110CFD7ATMA1 is optimized for high power switching tasks. The TO-263 package ensures easy surface mount installation and mechanical robustness.

Its cost advantages make it a competitive choice for power electronics designers aiming for both performance and budget efficiency. The MOSFET supports a maximum continuous drain current of 22 A. Operates at a maximum drain-to-source voltage of 700 V.

Features a 3-pin TO-263 surface mount package. Employs CoolMOS technology for enhanced efficiency and ruggedness. Integrated fast body diode improves switching performance. Offers safety margin for increased bus voltage designs.

Ideal for industrial SMPS, telecom, solar, and EV charging. Provides excellent light-load and full-load efficiency. Browse similar Infineon MOSFETs and power semiconductors at EnvMart for your electronic component needs.