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ROHM N-Channel IGBT 75 A 650 V 3-Pin TO-247N Through Hole RGSX5TS65DHRC11

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ROHM N-Channel IGBT 75 A 650 V 3-Pin TO-247N Through Hole RGSX5TS65DHRC11

Name: ROHM N-Channel IGBT 75 A 650 V 3-Pin TO-247N Through Hole RGSX5TS65DHRC11
Brand: ROHM
SKU: 173664
Price: 8.56 USD
Availability: InStock

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Category IGBT Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Model	RGSX5TS65DHRC11
Mount Type	Through Hole
Maximum Operating Temperature	175°C
Package Type	TO-247N
Minimum Operating Temperature	-40°C
Pin Count	3
Maximum Continuous Collector Current Ic	75A
Maximum Collector Emitter Voltage Vceo	650V
Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Power Dissipation Pd	404W
Maximum Gate Emitter Voltage VGEO	±30 V

Key Features

The device features a maximum power dissipation of 404 W for robust operation.
Mount type is through hole suitable for various circuit assemblies.
Operation is temperature rated from -40°C to 175°C for wide thermal range.
Maximum switching speed supports 1 MHz, enabling fast switching applications.
Qualified to AEC-Q101 automotive standards ensuring reliability in automotive use.
The maximum collector-emitter saturation voltage is 2.15 V, contributing to efficient conduction.
Maximum gate-emitter voltage tolerance is ±30 V providing robustness against gate drive variations.
Pb-free lead plating and RoHS compliance ensure environmental safety.

Product Description

ROHM RGSX5TS65DHRC11 is an N-Channel insulated-gate bipolar transistor (IGBT) designed for efficient power switching and control. This model supports a maximum continuous collector current of 75 A and a maximum collector-emitter voltage of 650 V, making it well suited for demanding power electronics applications.

The transistor is housed in a 3-pin TO-247N through-hole package, facilitating easy mounting and thermal management. It features a maximum power dissipation rating of 404 W, which allows it to handle significant power loads effectively.

Designed with automotive-grade quality, the RGSX5TS65DHRC11 meets the AEC-Q101 standard, confirming its suitability for automotive heater control systems and other industrial automation applications requiring high reliability and performance.

This IGBT offers a maximum collector-emitter saturation voltage of 2.15 V and supports switching frequencies up to 1 MHz, enabling rapid and efficient switching in power conversion devices.

The component's operating temperature range from -40°C to 175°C enables robust performance in harsh environments. Additionally, the ±30 V maximum gate-emitter voltage rating contributes to the device's resilience against voltage spikes at the gate terminal.

ROHM's RGSX series is recognized for its low collector-emitter saturation voltage and lead-free, RoHS-compliant construction, promoting environmentally responsible manufacturing. The device supports high continuous collector current of 75 A.

Maximum collector-emitter voltage rating of 650 V ensures wide application range. Power dissipation up to 404 W for effective heat management. 3-pin TO-247N package facilitates secure mounting and assembly. Qualified for automotive applications according to AEC-Q101 standards.

Operation over broad temperature range from -40°C to 175°C. High switching speed capability at 1 MHz. ±30 V gate-emitter voltage tolerance enhances durability. Lead-free plating meets environmental directives. Explore more specialized semiconductors and electronic components in the Electronics & Electricals category on EnvMart.