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ROHM N-Channel IGBT 75 A 650 V 3-Pin TO-247N Through Hole RGSX5TS65DHRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGSX5TS65DHRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 75A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 404W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- The device features a maximum power dissipation of 404 W for robust operation.
- Mount type is through hole suitable for various circuit assemblies.
- Operation is temperature rated from -40°C to 175°C for wide thermal range.
- Maximum switching speed supports 1 MHz, enabling fast switching applications.
- Qualified to AEC-Q101 automotive standards ensuring reliability in automotive use.
- The maximum collector-emitter saturation voltage is 2.15 V, contributing to efficient conduction.
- Maximum gate-emitter voltage tolerance is ±30 V providing robustness against gate drive variations.
- Pb-free lead plating and RoHS compliance ensure environmental safety.
Product Description
ROHM RGSX5TS65DHRC11 is an N-Channel insulated-gate bipolar transistor (IGBT) designed for efficient power switching and control. This model supports a maximum continuous collector current of 75 A and a maximum collector-emitter voltage of 650 V, making it well suited for demanding power electronics applications.
The transistor is housed in a 3-pin TO-247N through-hole package, facilitating easy mounting and thermal management. It features a maximum power dissipation rating of 404 W, which allows it to handle significant power loads effectively.
Designed with automotive-grade quality, the RGSX5TS65DHRC11 meets the AEC-Q101 standard, confirming its suitability for automotive heater control systems and other industrial automation applications requiring high reliability and performance.
This IGBT offers a maximum collector-emitter saturation voltage of 2.15 V and supports switching frequencies up to 1 MHz, enabling rapid and efficient switching in power conversion devices.
The component's operating temperature range from -40°C to 175°C enables robust performance in harsh environments. Additionally, the ±30 V maximum gate-emitter voltage rating contributes to the device's resilience against voltage spikes at the gate terminal.
ROHM's RGSX series is recognized for its low collector-emitter saturation voltage and lead-free, RoHS-compliant construction, promoting environmentally responsible manufacturing. The device supports high continuous collector current of 75 A.
Maximum collector-emitter voltage rating of 650 V ensures wide application range. Power dissipation up to 404 W for effective heat management. 3-pin TO-247N package facilitates secure mounting and assembly. Qualified for automotive applications according to AEC-Q101 standards.
Operation over broad temperature range from -40°C to 175°C. High switching speed capability at 1 MHz. ±30 V gate-emitter voltage tolerance enhances durability. Lead-free plating meets environmental directives. Explore more specialized semiconductors and electronic components in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous collector current of the ROHM RGSX5TS65DHRC11 is 75 A.
This model has a maximum collector-emitter voltage rating of 650 V.
It features a maximum power dissipation rating of 404 W, allowing it to handle significant power loads effectively.
The device is housed in a 3-pin TO-247N through-hole package, which facilitates easy mounting and thermal management.
The operating temperature range for this unit is from -40°C to 175°C.
This model has a maximum gate-emitter voltage tolerance of ±30 V, providing robustness against gate drive variations.
It is qualified to AEC-Q101 automotive standards, ensuring reliability in automotive applications.
The maximum collector-emitter saturation voltage for this IGBT is 2.15 V, contributing to efficient conduction.
This IGBT supports a maximum switching speed of up to 1 MHz, enabling fast switching applications.
The pin count for this model is 3.
The country of origin for this IGBT is India.
This model features an N-channel design, which is typical for IGBTs used in power applications.
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