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Infineon RF CMOS Switch, 19-Pin PG-WLGA-18-1, CMOS Technology, Surface Mount, Operating Bands 0.4 GHz BGSX44MU18E6327XUSA1

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Infineon RF CMOS Switch, 19-Pin PG-WLGA-18-1, CMOS Technology, Surface Mount, Operating Bands 0.4 GHz BGSX44MU18E6327XUSA1

Name: Infineon RF CMOS Switch, 19-Pin PG-WLGA-18-1, CMOS Technology, Surface Mount, Operating Bands 0.4 GHz BGSX44MU18E6327XUSA1
Brand: Infineon
SKU: 173237
Price: 2.29 USD
Availability: InStock

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Category RF Switch Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	BGSX44MU18E6327XUSA1
Technology	CMOS
Mount Type	Surface
Series	BGSX44MU 1 8
Maximum Operating Temperature	85°C
Package Type	PG-WLGA-18-1
Minimum Operating Temperature	-40°C
Pin Count	19
Maximum Supply Voltage	1.95V
Minimum Supply Voltage	1.65V
Operating Band 1 Frequency	0.4GHz
Operating Band 2 Frequency	7.13GHz
Number of Operating Bands	2

Key Features

Specifically designed for LTE and 5G FR1 four-antenna applications.
Offers low insertion loss and low harmonic generation in 4P4T cross-switch configuration.
Controlled via MIPI RFFE 2.1 control interface for efficient power management.
Supports power-supply voltages from 1.65 to 1.95 V with direct connect to battery functionality.
Features DC-free RF ports and ultra low profile lead-less plastic package.
Compact size of 2.0 mm x 2.4 mm and thickness of 0.63 mm for space-constrained designs.
High linearity up to 37 dBm peak power ensuring excellent signal integrity.
Fast switching times suitable for 5G SRS applications.

Product Description

Infineon BGSX44MU18E6327XUSA1 is a high-performance RF CMOS switch packaged in a compact 19-Pin PG-WLGA-18-1 surface mount package. This device operates efficiently over two band frequencies from 0.4 GHz to 7.13 GHz and is built using CMOS technology.

It is specifically engineered for LTE and 5G FR1 antenna applications with a 4P4T cross-switch that provides low insertion loss and minimal harmonic generation. The switch is controlled via an advanced MIPI RFFE 2.1 interface, enabling low power consumption and flexible hardware and software programmable USID configuration.

Its operating voltage range is from 1.65 V to 1.95 V, featuring direct-connect-to-battery capability and DC-free RF ports that contribute to stable operation and signal clarity. The ultra-low profile, lead-less plastic package measures just 2.0 mm by 2.4 mm with a thickness of 0.63 mm, making it suitable for highly miniaturized designs.

Infineon’s RF Switch delivers high linearity with peak power handling up to 37 dBm and fast switching times optimized for 5G SRS applications. The device complies with relevant environmental directives including RoHS and WEEE, ensuring eco-friendly operation.

This component is ideal for industrial, telecommunications, automotive and RF communication system applications where compact size, efficient power handling, and low signal distortion are critical.

Specifically designed for LTE and 5G FR1 four-antenna applications. Low insertion loss and low harmonic generation with 4P4T cross-switch. Power supplied and controlled via MIPI RFFE 2.1 interface. Direct connect to battery and DC-free RF ports.

Very small footprint and low profile packaging. High linearity allowing up to 37 dBm peak power. Fast switching time for 5G SRS signal requirements. RoHS and WEEE compliant for environmental safety. Explore our wide range of semiconductors and RF ICs for advanced communication systems at EnvMart.