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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | VP2206 |
| Mount Type | Through Hole |
| Series | VP2206 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -640mA |
| Maximum Drain Source Voltage Vds | -60V |
| Maximum Drain Source Resistance Rds | 0.9Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 0.74W |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.8V |
Microchip VP2206 P-Channel MOSFET, model VP2206, is an enhancement-mode transistor manufactured with a vertical DMOS structure and Supertex silicon-gate process technologies. It supports a continuous drain current of -640 mA and a maximum drain-source voltage of -60 V, housed in a compact 3-pin TO-92 package designed for through-hole mounting. Rated for maximum power dissipation of 0.74W, this device efficiently handles low power requirements with robust thermal management.
The device operates reliably within a temperature range of -55°C to 150°C, making it suitable for industrial, commercial, and laboratory electronics applications. Featuring a low drain-source resistance of 0.9Ω and a maximum gate-source voltage of 30 V, it ensures minimal conduction loss and stable gate control.
This MOSFET also incorporates an integral source-to-drain diode to protect circuits and enhance switching performance. The vertical DMOS design provides immunity to thermal runaway and secondary breakdown, facilitating reliable operation under varying load and environmental conditions.
Applications include switching circuits, amplifiers, low voltage power management, and other use cases where fast switching and high gain are critical. The device's high input impedance and low input capacitance contribute to reduced driving power and enhanced efficiency.
This enhancement-mode vertical DMOS transistor offers high input impedance and positive temperature coefficient. It has a maximum power dissipation of 0.74W suitable for low-power switching applications. Designed for through-hole mounting, it provides ease of installation in various circuits.
Supports a wide operating temperature range from -55°C to 150°C for industrial reliability. Includes an integral source-to-drain diode, improving circuit robustness and switching speed. Best suited for switching and amplifying applications requiring fast switching speeds and low threshold voltage.
Offers low gate drive power requirements and excellent thermal stability.
Choose the Microchip VP2206 MOSFET for reliable semiconductor performance in electronics, manufacturing, industrial control, and power management systems. Browse EnvMart for related semiconductor devices and MOSFET products for your technical needs.
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