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Nexperia NPN High Voltage Transistor PMBTA42,215 100 mA 300 V 3-Pin SOT-23

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Voltage Transistor, 100 mA NPN, 300 V, 3-Pin SOT-23 RS Stock No
Brand Nexperia
Model PMBTA42,215
Mount Type Surface
Series PMBTA42
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Maximum Transition Frequency ft 50MHz
onsemi MMBTA42LT1G Transistor, 500 mA NPN, 300 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Maximum collector current rated at 100 mA for efficient switching.
  • High maximum collector-emitter voltage of 300 V suitable for high voltage circuits.
  • Surface mount mounting type for compact PCB layouts.
  • Maximum power dissipation of 250 mW allowing reliable operation under load.
  • Wide operating temperature range from -65°C to 150°C for demanding environments.
  • Minimum DC current gain of 25 ensuring amplification performance.
  • Maximum transition frequency of 50 MHz enabling high-speed switching applications.
  • Compact 3-pin SOT-23 package ideal for dense electronic assemblies.

Product Description

The Nexperia PMBTA42,215 is a high voltage NPN bipolar junction transistor ideal for use in industrial, electronics, and laboratory applications requiring reliable switching and amplification at elevated voltages. Packaged in a compact 3-pin SOT-23 surface mount device, it is designed to handle a maximum DC collector current of 100 mA and collector-emitter voltage up to 300 V, making it suitable for high-voltage signal processing circuits.

This transistor features a maximum power dissipation rating of 250 mW, enabling it to operate efficiently in moderate power applications. It offers a minimum DC current gain (hFE) of 25, providing effective amplification in low to medium power switching circuits. The transistor supports a maximum emitter-base voltage of 6 V and collector-base voltage of 300 V, ensuring robust electrical tolerance.

Operating temperature range extends from -65°C up to 150°C, allowing for deployment in harsh industrial and commercial environments. The maximum transition frequency of 50 MHz supports moderately high-speed switching and amplification requirements.

Its small SOT-23 (TO-236AB) plastic package facilitates use in compact PCB designs with surface mount technology, enabling modern automated manufacturing processes. The 3-pin format simplifies circuit integration for discrete bipolar transistor applications.

Maximum collector current of 100 mA. Collector-emitter voltage rating of 300 V. Surface mount SOT-23 package. Power dissipation up to 250 mW. Operating temperature range -65°C to 150°C. Minimum DC current gain (hFE) of 25.

Maximum transition frequency 50 MHz. 3-pin bipolar transistor design.

This component is suitable for use in electronic circuits requiring low to medium power switching and amplification in industrial automation, measurement equipment, consumer electronics, and communications devices. Nexperia’s reliable manufacture ensures consistent electrical performance with compliance to industry standards.

Explore more Nexperia Bipolar Transistors and other semiconductor components on EnvMart to find precise parts matching your project requirements.

Nexperia NPN High Voltage Transistor PMBTA42,215 100 mA 300 V 3-Pin SOT-23
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Frequently Asked Questions

The maximum collector current rating of the Nexperia PMBTA42,215 is 100 mA, making it suitable for efficient switching applications.

This model has a maximum collector-emitter voltage rating of 300 V, suitable for high voltage circuits.

The PMBTA42,215 is packaged in a compact 3-pin SOT-23 surface mount package, ideal for dense PCB layouts.

It has a maximum power dissipation rating of 250 mW, allowing for reliable operation under load.

The operating temperature range for this model extends from -65°C to 150°C, making it suitable for demanding environments.

The transistor features a minimum DC current gain (hFE) of 25, ensuring effective amplification performance.

The maximum transition frequency for the PMBTA42,215 is 50 MHz, enabling high-speed switching applications.

The maximum emitter-base voltage (VEBO) is 6 V, and the maximum collector-base voltage (VCBO) is 300 V.

This model is an NPN bipolar junction transistor, suitable for various electronic applications.

It is suitable for use in industrial automation, measurement equipment, consumer electronics, and communications devices.

The surface mount design allows for compact PCB layouts and facilitates modern automated manufacturing processes.

The country of origin for this transistor is India.

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