World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Nexperia Small Signal PNP Transistor BC857BS,115, 100 mA, 45 V, 6-Pin UMT Surface Mount BC857BS,115

Free Delivery in India | Lowest Global Shipping Charges

Nexperia Small Signal PNP Transistor BC857BS,115, 100 mA, 45 V, 6-Pin UMT Surface Mount BC857BS,115

Name: Nexperia Small Signal PNP Transistor BC857BS,115, 100 mA, 45 V, 6-Pin UMT Surface Mount BC857BS,115
Brand: Nexperia
SKU: 164473
Price: 0.06 USD
Availability: InStock



Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	0.95mm
Length	2.1mm
Model	BC857BS,115
Width	1.25mm
Mount Type	Surface
Series	BC857BS
Maximum Operating Temperature	150°C
Package Type	UMT
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	6
Maximum Collector Emitter Voltage Vceo	-45V
Minimum DC Current Gain hFE	200
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Isolated
Maximum Transition Frequency ft	100MHz
onsemi BC857BDW1T1G Transistor, -100 mA PNP, -45 V, 6-Pin SOT-363Brand	onsemi

Key Features

This transistor features a 6-pin UMT package optimized for compact PCB designs.
It offers a minimum DC current gain (hFE) of 200 ensuring adequate amplification.
Maximum power dissipation is rated at 300 mW to maintain device reliability.
Operating temperature range spans from -65°C to 150°C, suitable for varied environments.
Maximum transition frequency is 100 MHz, supporting high-speed switching applications.
Equipped with PNP polarity and isolated transistor configuration for efficient performance.
Manufactured to RoHS standards, ensuring compliance with environmental safety requirements.

Product Description

Nexperia BC857BS,115 is a small signal PNP transistor designed in a 6-pin UMT surface mount package to provide high performance in electronic circuits.

With a maximum DC collector current of 100 mA and collector emitter voltage rating of 45 V, it is ideal for low power amplification and switching tasks requiring reliability and efficiency.

This device provides a minimum DC current gain (hFE) of 200 and maximum power dissipation of 300 mW, making it suitable for operating in demanding industrial and consumer electronic applications.

The transistor operates effectively within a wide operating temperature range of -65°C to 150°C and supports a transition frequency up to 100 MHz enabling high-speed switching necessary for communication and control systems.

Its compact dimensions of 2.1 mm length, 1.25 mm width, and 0.95 mm height allow dense PCB packing and integration. The device complies with RoHS environmental standards and is manufactured in Malaysia ensuring quality and sustainability.

This transistor features a 6-pin UMT surface mount package optimized for compact PCB designs. Minimum DC current gain (hFE) of 200 for reliable amplification. Maximum power dissipation rated at 300 mW maintains device reliability.

Wide operating temperature range from -65°C to 150°C. High transition frequency of 100 MHz supports fast switching applications. PNP transistor polarity with isolated transistor configuration. Compact package dimensions: 2.1 mm length, 1.25 mm width, 0.95 mm height.

RoHS compliant manufacturing ensures environmental safety. Origin: Malaysia, ensuring quality manufacturing standards.

This Nexperia bipolar transistor is widely used in industrial electronics, consumer devices, automotive controls, communication equipment, and test instrumentation where small signal PNP transistor performance is required.

Explore additional electronic components and Bipolar Transistors on EnvMart for comprehensive industrial and professional use.