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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1.3mm |
| Length | 3mm |
| Model | IMB3AT110 |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | IMB3A |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-457 |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -50V |
| Maximum Power Dissipation Pd | 300mW |
| Transistor Configuration | Dual |
The ROHM IMB3AT110 digital transistor is a high-performance PNP bipolar transistor featuring a dual transistor configuration in a compact 6-pin SOT-457 surface mount package. Designed specifically for electronic applications requiring signal amplification and switching, it supports maximum collector emitter voltages of -50 V and maximum collector base voltages of -50 V, making it suitable for inverter, interface, and driver circuits in industrial and commercial electronic systems.
Constructed to operate under demanding conditions, this transistor supports a maximum power dissipation of 300mW and a maximum operating temperature of 150°C, ensuring reliability and robust performance even under thermal and electrical strain. Its minimum DC current gain (hFE) of 100 facilitates effective current amplification critical for signal processing tasks.
Compact dimensions of 3mm length, 1.8mm width, and 1.3mm height combined with a six-pin layout optimize PCB space and allow for streamlined surface mount manufacturing processes. The maximum emitter base voltage rating of -5 V ensures longevity of transistor junctions by preventing voltage exceedance.
This ROHM Digital Transistor is widely used across semiconductor applications including industrial electronics, power management circuits, and PCB design projects that require reliable transistor elements with low footprint. Its surface mount configuration facilitates automated assembly lines in manufacturing.
Maximum collector emitter voltage: -50 V. Dual transistor configuration for versatile circuit design. Power dissipation capacity up to 300mW. Compact surface mount SOT-457 package. Strong minimum DC current gain rating of 100.
High operating temperature tolerance of 150°C. Dimensions optimized for limited PCB space usage. Reliable performance in inverter and driver interfaces. Series model: IMB3A for consistent performance standards. Suitable for industrial and commercial electronic applications.
For comprehensive selection of electronic components including semiconductors and discrete transistors, consider exploring EnvMart's Electronics & Electricals semiconductor categories for reliable industrial-grade components.
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