onsemi Digital Transistor 400 V NPN Through Hole TO-220 3-Pin BU406G

onsemi BU406G Digital Transistor is a high voltage, fast switching NPN transistor in a TO-220 through hole package with 3 pins, rated for 400 V collector-emitter voltage and 60 W power dissipation. It is designed primarily for horizontal deflection output stages in televisions and cathode ray tubes.

This transistor features a maximum operating temperature of 150°C, a maximum collector base voltage of 400 V, and a low saturation voltage of 1 V at 5 A, offering efficient switching performance. Its minimum DC current gain (hFE) is 10, assuring adequate amplification.

The BU406G has a single transistor configuration suitable for discrete semiconductor applications. The compact TO-220 package measures approximately 10.53 mm in length, 9.28 mm in height, and 4.83 mm in width making it compatible with through hole mounting designs. The device is Pb-free and meets environmental considerations for modern electronics manufacturing.

Key features include fast switching speed with a transition time (tf) max of 750 ns, high voltage tolerance to 400 V, and low saturation voltage, optimizing performance in power and signal amplification circuits. It is suitable for industrial, electronics manufacturing, laboratory prototyping, and repair environments where reliable bipolar transistors are required.

Maximum collector-emitter voltage of 400 V. Maximum power dissipation of 60 W. Fast switching speed with max transition time of 750 ns. Low saturation voltage of 1 V at 5 A. Operating temperature range up to 150°C. TO-220 package type with through hole mount.

Single NPN transistor configuration. 3-pin count package. Pb-free package compliant with environmental standards. Manufactured in China.

This transistor is highly suitable for electronic components, semiconductor applications, and power electronics requiring digital NPN transistors with robust voltage and power handling. Browse the Digital Transistor category for complementary components at EnvMart.