$26.25
$25.46
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Microchip N-Channel MOSFET 350 mA 90 V Enhancement Mode TO-39 Package 3-Pin 2N6661
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 6.6mm |
| Model | 2N6661 |
| Width | 9.398mm |
| Mount Type | Through Hole |
| Series | 2N6661 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-39 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 350mA |
| Maximum Drain Source Voltage Vds | 90V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.25W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
| Drivers | relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc |
Key Features
- This enhancement mode MOSFET operates with high thermal stability between -55°C and 150°C.
- Maximum gate-source voltage is 20 V with a forward voltage of 900 mV.
- The device features a maximum power dissipation of 6.25 W suitable for various electronic applications.
- Its vertical DMOS structure optimizes switching and conduction losses providing excellent efficiency.
- The MOSFET is free from thermal runaway and secondary breakdown enhancing durability.
- Applications include amplifiers, converters, motor controls, power supply circuits, and relay drivers.
- The package size is compact with 9.398 mm width and 6.6 mm height for PCB integration.
- It includes an integral source-drain diode providing protection during switching operations.
Product Description
Microchip 2N6661 is a high-performance N-Channel MOSFET designed for electronic components requiring efficient power management. This enhancement mode transistor offers a maximum continuous drain current of 350 mA and a drain-source voltage of 90 V in a robust TO-39 package with 3 pins for through-hole mounting.
Constructed using a vertical DMOS structure and silicon gate technology, this MOSFET provides high input impedance and excellent gain while being free from thermal runaway and thermally induced secondary breakdown. Its 6.25 W maximum power dissipation and low drain-source resistance ensure reliable operation under electrical stress.
The device's maximum gate-source voltage of 20 V and forward voltage of 900 mV make it suitable for switching and amplification applications. It operates effectively within a wide temperature range from -55°C to 150°C, supporting industrial and commercial electronics.
Its features include ease of paralleling, excellent thermal stability, low input drive power requirements, and fast switching speeds. The integral source-drain diode provides protection during switching transients, enhancing device longevity.
Applications for the Microchip 2N6661 MOSFET span a variety of industrial uses including amplifiers, voltage converters, relay and solenoid drivers, motor control circuits, and general power supply control. Its TO-39 package offers straightforward PCB integration with through-hole mounting.
High thermal stability and resistance to secondary breakdown. Low switching and conduction losses optimized for efficiency. Integral source-drain diode for reliable switching protection. Wide operating temperature range from -55°C to 150°C.
Compact TO-39 package suitable for through-hole mounting. Applications in amplifiers, converters, motor controls, and relay drivers. Silicon gate technology with vertical DMOS structure. Enhancement mode for normally-off operation.
This product represents a dependable choice for industrial, laboratory, and commercial electronics requiring efficient MOSFET switching and power management components. Browse the MOSFET category at EnvMart for related Microchip transistors and power devices.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of the 2N6661 is 350 mA.
The maximum drain-source voltage for the 2N6661 is 90 V.
The maximum power dissipation rating of the 2N6661 is 6.25 W.
This MOSFET operates within a temperature range of -55°C to 150°C.
The 2N6661 comes in a TO-39 package suitable for through-hole mounting.
The maximum gate-source voltage for the 2N6661 is 20 V.
Applications for the 2N6661 include amplifiers, converters, motor controls, and relay drivers.
The forward voltage of the 2N6661 is 900 mV.
The height of the 2N6661 is 6.6 mm and the width is 9.398 mm.
The 2N6661 has 3 pins.
The 2N6661 uses an N-channel configuration.
The 2N6661 complies with ANSI/ESD S20.20 (2014) and BS EN 61340-5-1 (2007).
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$23.16
$20.22
-12.7%
New
$0.94
$0.91
-3%
New
$1.01
$0.98
-3%
New
$26.25
$25.46
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent