Nexperia P-Channel MOSFET 225 mA 250 V Enhancement Type BSP225,115

Nexperia BSP225,115 P-Channel MOSFET is a Discrete Semiconductor device designed for efficient switching and amplification applications in electronic circuits. The device supports a maximum continuous drain current of 225 mA and a drain-source voltage of 250 V, operating in enhancement mode with a P-type channel.

Its 4-pin SC-73 surface mount package enables easy integration into compact PCB layouts, measuring 6.7 mm in length, 3.7 mm in width, and 1.7 mm in height. The MOSFET tolerates wide operating temperatures from -65°C to 150°C, making it suitable for industrial, consumer electronics, and automotive applications.

The maximum power dissipation rating of 1.5 W ensures stable operation under standard load conditions.

This component features a maximum drain-source resistance of 15 Ω to reduce energy losses and a maximum gate-source voltage range of -20 V to +20 V for enhanced gate drive control.

This MOSFET features a 4-pin SC-73 surface mount package design. Maximum power dissipation is rated at 1.5 W for reliable performance. Operation temperatures range from -65°C to 150°C ensuring durability in harsh environments.

Maximum drain-source resistance is 15 Ω, supporting efficient electrical flow. Maximum gate-source voltage tolerance is between -20 V and +20 V providing robust gate control. Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.7 mm height optimize PCB space usage.

Designed as an enhancement mode P-channel MOSFET suitable for switching and load driving applications. Manufactured in China with new product condition assuring quality and authenticity.

This MOSFET is ideal for electronic design engineers, industrial automation, and electronic manufacturing, optimizing power efficiency and system reliability in semiconductor circuits.

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