World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

Nexperia Type P-Channel MOSFET, -3.2 A Drain Current, -12 V Drain Source Voltage, 4-Pin DFN Package PMXB65UPEZ

Free Delivery in India | Lowest Global Shipping Charges

Nexperia Type P-Channel MOSFET, -3.2 A Drain Current, -12 V Drain Source Voltage, 4-Pin DFN Package PMXB65UPEZ

Name: Nexperia Type P-Channel MOSFET, -3.2 A Drain Current, -12 V Drain Source Voltage, 4-Pin DFN Package PMXB65UPEZ
Brand: Nexperia
SKU: 147676
Price: 0.14 USD
Availability: InStock



Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	360μm
Length	1.15mm
Model	PMXB65UPEZ
Width	1.05mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	DFN
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	Type P
Maximum Continuous Drain Current Id	-3.2A
Maximum Drain Source Voltage Vds	-12V
Maximum Drain Source Resistance Rds	880mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	8.33W
Typical Gate Charge Qg @ Vgs	6.7nC
Maximum Gate Source Voltage Vgs	8V
Leadless ultra small and ultra thin SMD plastic package	1.1 x 1.0 x 0.37 mm

Key Features

The device supports a maximum continuous drain current of -3.2 A.
It has a maximum drain-source voltage of -12 V.
Features a low on-resistance Rds(on) of 880 mΩ for improved efficiency.
Constructed with trench MOSFET technology for enhanced performance.
Compact leadless DFN1010D-3 package with dimensions 1.1 x 1.0 x 0.37 mm.
Operates safely in temperature ranges from -55°C to 150°C.
Provides ElectroStatic Discharge (ESD) protection up to 1.5 kV HBM.
Designed for surface mount applications with a pin count of 4.

Product Description

Nexperia PMXB65UPEZ Type P-Channel MOSFET is a compact and reliable 4-pin discrete semiconductor device designed for power and electronic circuit applications that require P-channel enhancement mode switching with a maximum continuous drain current of -3.2 A and a drain-source voltage rating of -12 V. It utilizes advanced trench MOSFET technology to deliver excellent performance with a low drain-source resistance of 880 mΩ and minimal gate charge for efficient switching.

The product's ultra-small leadless DFN1010D-3 surface-mount package measures just 1.15 mm in length, 1.05 mm in width, and 0.36 mm in height, making it suitable for compact PCBs and high-density mounting in industrial, automotive, and consumer electronic applications. The device is qualified for operation from -55°C to 150°C, ensuring robust performance across a wide temperature range.

This MOSFET also includes enhanced ElectroStatic Discharge (ESD) protection rated at 1.5 kV human body model, improving device longevity and system reliability. Its low gate threshold voltage and high maximum gate-source voltage of 8 V make it well-suited for portable and battery-powered applications.

With surface mount compatibility, the Nexperia PMXB65UPEZ is ideal for modern electronic designs in industrial automation, power management circuits, and control devices requiring efficient MOSFET performance in a very small form factor.

The device supports a maximum drain current of -3.2 A and maximum drain-source voltage of -12 V. Features a compact leadless DFN package of 1.1 x 1.0 x 0.37 mm dimensions. Trench MOSFET technology ensures low on-resistance and efficient switching.

Wide operating temperature range from -55°C to 150°C for reliability. Four-pin configuration for surface mount applications. Provides 1.5 kV ESD protection compliant with industry standards. Designed for use in industrial, automotive, and consumer electronics.

This product is part of the extensive Nexperia MOSFET catalog providing solutions for a variety of electronic component needs. Explore more Nexperia power and discrete semiconductors with advanced features on EnvMart.