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Infineon Silicon Junction Switching Diode, Single, 80 A, 650 V, 2-Pin TO-220 Package IDP40E65D2XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.2mm |
| Model | IDP40E65D2XKSA1 |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Power Dissipation Pd | 200W |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 250A |
| Maximum Forward Voltage Vf | 2.2V |
| Peak Reverse Recovery Time trr | 83ns |
| Maximum Forward Current If | 80A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V |
| Low reverse recovery charge | forward voltage ratio for BiC performance |
Key Features
- This diode features a maximum power dissipation of 200 W for high reliability.
- It supports peak non-repetitive forward surge current up to 250 A.
- Designed with a peak reverse recovery time of 83 ns for ultra-fast switching.
- Operates safely within a wide temperature range from -40°C to 175°C maximum.
- The package is a through hole type with 2 pins for easy mounting.
- The device has low conduction losses and good EMI behavior for efficient performance.
- Ideal for applications including power factor correction, telecom, UPS, welding, and motor drives.
- Its ultra-soft diode technology supports switching frequencies up to 100 kHz.
Product Description
Infineon IDP40E65D2XKSA1 is a single silicon junction switching diode designed for industrial and commercial electronic applications. The diode is housed in a TO-220 package with a 2-pin through hole mounting style, facilitating robust and stable assembly in power electronics.
This diode supports a maximum forward current of 80 A, ensuring suitability for high current applications. With a maximum power dissipation of 200 W, it can withstand substantial thermal loads, making it ideal for demanding environments.
The device’s peak reverse recovery time is only 83 nanoseconds, providing ultra-fast switching capabilities essential for efficient power conversion and control in systems such as power factor correction (PFC) topologies, uninterruptible power supplies (UPS), and motor drive controllers operating up to 30 kHz.
Operating temperature ranges from -40°C to 175°C, enabling deployment in harsh and temperature-variable industrial and automotive-like environments, although this diode itself does not carry automotive approval.
The diode is characterized by low conduction losses, good EMI behavior, and easy paralleling capabilities, which optimize power efficiency and reduce electromagnetic interference in electrical circuits. This makes it particularly effective for use in telecommunications, welding equipment, AC-DC power supplies, and frequency conversion systems.
Fast switching emitter controlled diode technology for reduced switching losses. Ultra-soft diode variant supports higher switching frequencies with improved recovery characteristics. Stable forward voltage ensures consistent operation across temperature ranges.
Designed with JEDEC standards quality with high reliability for industrial use. Provides low reverse recovery charge to improve efficiency in bi-directional converter circuits. Set includes one Infineon Silicon Junction Switching Diode IDP40E65D2XKSA1.
Explore a wide range of semiconductor devices and Switching Diodes on EnvMart for industrial, commercial, and laboratory applications.
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Frequently Asked Questions
The maximum forward current of the Infineon IDP40E65D2XKSA1 is 80 A, making it suitable for high current applications.
This diode features a peak reverse recovery time of 83 nanoseconds, allowing for ultra-fast switching capabilities.
The maximum power dissipation for this diode is 200 W, enabling it to handle substantial thermal loads.
It operates safely within a temperature range from -40°C to 175°C, suitable for various industrial environments.
The diode is housed in a TO-220 package, featuring a 2-pin through hole mounting style for easy installation.
The peak non-repetitive forward surge current for this model is up to 250 A, which supports high reliability in demanding applications.
This diode is ideal for applications including power factor correction, telecom, uninterruptible power supplies (UPS), welding, and motor drives.
The diode measures 15.95 mm in height, 10.2 mm in length, and 4.5 mm in width.
The maximum peak reverse repetitive voltage for this diode is 650 V, allowing it to withstand high voltage applications.
The maximum forward voltage for this diode is 2.2 V, ensuring stable operation in various conditions.
This model is a single diode configuration, designed for efficient performance in electronic circuits.
This diode has a low reverse recovery charge, which improves efficiency in bi-directional converter circuits.
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