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STMicroelectronics High-Voltage 8 A NPN Transistor, 700 V, 3-Pin TO-247 BU508AW
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 34.95mm |
| Length | 15.75mm |
| Model | BU508AW |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 700V |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 9V |
| Maximum Power Dissipation Pd | 125W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
Key Features
- Maximum DC collector current of 8 amperes suitable for power applications.
- Collector-emitter voltage rating of 700 volts for high voltage tolerance.
- Maximum power dissipation of 125 watts for reliable heat handling.
- Through hole mount type with robust TO-247 package for easy PCB integration.
- Three-pin configuration designed for NPN transistor polarity and single transistor setup.
- Operates within a temperature range of 0°C to 150°C for diverse environments.
- Low minimum DC current gain (hFE) of 5, ensuring controlled amplification.
- Pin count of 3 ensuring compatibility with standard transistor circuits.
Product Description
STMicroelectronics BU508AW transistor is a high-voltage NPN bipolar transistor encased in a durable 3-pin TO-247 through-hole package. It supports a maximum collector current of 8 A and collector-emitter voltage up to 700 V, making it suitable for demanding power switching and amplification tasks.
The transistor handles power dissipation up to 125 W, ensuring it can sustain heavy load operations in technical environments. It features a minimum DC current gain of 5 and a single transistor configuration, ideal for applications requiring reliable switching and signal control.
Designed to operate in a temperature range from 0°C to 150°C, it fits industrial-grade use cases such as power supply regulation, motor control, and high-voltage switching circuits.
The product dimensions (Height: 34.95 mm; Length: 15.75 mm; Width: 5.15 mm) and the TO-247 package format provide stable mechanical and electrical performance on through-hole PCB layouts.
Key technical features include a maximum collector base voltage (VCBO) and emitter base voltage (VEBO) rated at 9 V to maintain device reliability under various electrical stresses.
Maximum collector current: 8 A for power applications. Collector-emitter voltage: 700 V for high voltage tolerance. Power dissipation rating: 125 W with adequate thermal management. TO-247 package, through-hole mount type for durable installation.
3-pin single NPN transistor configuration for versatile circuit design. Minimum DC current gain (hFE) of 5 for controlled signal amplification. Operating temperature range of 0 to 150 °C for industrial environments. Compact dimensions fit standard power electronics applications.
Maximum collector base and emitter base voltages of 9 V each.
This STMicroelectronics BU508AW transistor is ideal for industrial, commercial, and electrical engineering applications requiring reliable, robust, and high-voltage semiconductor components.
Explore more high-quality semiconductor components in the EnvMart category for Electronics & Electricals.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum collector current is 8 A, making it suitable for power applications.
It has a collector-emitter voltage rating of 700 V, providing high voltage tolerance.
The transistor can handle a maximum power dissipation of 125 W, ensuring reliable heat management.
It is encased in a TO-247 package, which is a through-hole mount type for easy PCB integration.
The BU508AW operates within a temperature range of 0°C to 150°C, suitable for diverse environments.
This model features a 3-pin configuration designed for NPN transistor polarity.
It has a minimum DC current gain (hFE) of 5, ensuring controlled amplification.
The dimensions are 34.95 mm in height, 15.75 mm in length, and 5.15 mm in width.
The maximum emitter base voltage (VEBO) is rated at 9 V, which helps maintain device reliability.
It is ideal for applications such as power supply regulation, motor control, and high-voltage switching circuits.
This model uses a single NPN transistor configuration, suitable for versatile circuit design.
The maximum collector base voltage (VCBO) is also rated at 9 V, ensuring reliability under electrical stress.
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