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STMicroelectronics 7-Element NPN Darlington Transistor Array, 500 mA Collector Current, 50 V ULN2003D1013TR

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STMicroelectronics 7-Element NPN Darlington Transistor Array, 500 mA Collector Current, 50 V ULN2003D1013TR

Name: STMicroelectronics 7-Element NPN Darlington Transistor Array, 500 mA Collector Current, 50 V ULN2003D1013TR
Brand: STMicroelectronics
SKU: 137289

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Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	1.65mm
Length	10mm
Model	ULN2003D1013TR
Mount Type	Surface
Series	ULN2003
Maximum Operating Temperature	85°C
Package Type	SOIC
Minimum Operating Temperature	-20°C
Pin Count	16
Maximum Continuous Collector Current Ic	500mA
Maximum Collector Emitter Voltage Vceo	50V
Number of Elements per Chip	7
Minimum DC Current Gain hFE	1000
Transistor Polarity	NPN
Maximum Collector Emitter Saturation Voltage VceSAT	1.6V
onsemi ULN2003ADR2G, 7-element NPN Darlington Transistor Array, 500 mA HFE	1000, 16-Pin SOICBrand: ON Semiconductor
STMicroelectronics 7 Seven Darlington array NPN, 500 mA 50 V HFE	1000, 16-Pin SOIC

Key Features

Each element delivers a maximum continuous collector current of 500 mA.
Maximum collector-emitter voltage rating is 50 V for robust switching.
Features 16-pin SOIC surface-mount package optimized for easy PCB layout.
Integral suppression diodes for inductive load protection.
High minimum DC current gain of 1000 ensures efficient amplification.
NPN transistor polarity suited for standard interface logic levels.
Operating temperature range from -20°C to 85°C for reliable performance.
Low collector-emitter saturation voltage of 1.6 V reduces power loss.

Product Description

STMicroelectronics ULN2003D1013TR is a seven-element NPN Darlington transistor array designed for high-voltage and high-current switching in electronic and industrial applications. This component features a 16-pin SOIC surface-mount package, ensuring efficient PCB layout and integration.

Each Darlington pair can handle a maximum continuous collector current of 500 mA and withstand collector-emitter voltages up to 50 V. The transistor pairs have a high minimum DC current gain (hFE) of 1000, which guarantees effective signal amplification and switching performance.

This array includes integral suppression diodes that protect against inductive load back-emf, making it suitable for driving relays, solenoids, and other inductive devices commonly used in automation and control systems.

It operates reliably over a temperature range extending from -20°C to 85°C and sustains a low collector-emitter saturation voltage of 1.6 V, thus optimizing power efficiency and thermal management.

The device dimensions of 10 mm in length and 1.65 mm in height enable compact designs requiring multiple high-current switches on a single IC. Its NPN transistor polarity and standard logic level interface make it compatible with TTL and CMOS logic families.

Maximum continuous collector current of 500 mA per element. Maximum collector-emitter voltage rated at 50 V. 16-pin SOIC surface-mount package for optimal layout. Integral suppression diodes for inductive load protection.

High minimum DC current gain of 1000 ensures efficient amplification. NPN transistor polarity compatible with standard logic levels. Operating temperature range from -20°C to 85°C. Low collector-emitter saturation voltage of 1.6 V.

Compact size: 10 mm length, 1.65 mm height.

This Darlington Transistor array is suited for use in electronic power drivers, industrial automation, motor control, and signal switching applications. It offers robust and reliable performance for demanding electronic designs.

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