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STMicroelectronics 7 Seven Darlington Array NPN 500 mA 50 V HFE 1000 16-Pin SOIC ULN2003D1013TR

Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 1.65mm
Length 10mm
Model ULN2003D1013TR
Mount Type Surface
Series ULN2003
Maximum Operating Temperature 85°C
Package Type SOIC
Minimum Operating Temperature -20°C
Pin Count 16
Maximum Continuous Collector Current Ic 500mA
Maximum Collector Emitter Voltage Vceo 50V
Number of Elements per Chip 7
Minimum DC Current Gain hFE 1000
Transistor Polarity NPN
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
STMicroelectronics ULN2003D1013TR 7 Seven Darlington array NPN, 500 mA 50 V HFE 1000, 16-Pin SOIC

Key Features

  • Features seven Darlington arrays per chip designed for high current switching.
  • Each output can handle up to 500 mA continuous collector current.
  • Maximum collector-emitter voltage rating is 50 V ensuring reliable operation.
  • Peak current gain (hFE) minimum of 1000 for efficient amplification.
  • Standard logic level interface compatible with TTL and CMOS.
  • Includes integral suppression diodes suitable for inductive load protection.
  • Surface mountable SOIC package with 16 pins for efficient PCB layout.
  • Operates reliably in temperature range from -20°C to 85°C.

Product Description

STMicroelectronics ULN2003D1013TR is a 7 seven Darlington array featuring NPN transistor pairs designed for power driving applications. It offers a maximum continuous collector current of 500 mA and can withstand a collector-emitter voltage of up to 50 V. The device is housed in a compact 16-Pin SOIC surface mount package.

This Darlington transistor array includes integral suppression diodes that protect against inductive load transients, making it ideal for switching inductive loads such as relays, solenoids, and motors commonly found in industrial automation and control systems.

The input configuration supports standard TTL and CMOS logic levels, simplifying interface with digital control circuits. It boasts a minimum DC current gain (hFE) of 1000, enabling efficient and reliable power amplification.

The device comfortably operates over a temperature range from -20°C to 85°C, suitable for various industrial and commercial applications including robotics, motor control, and automation systems.

The physical dimensions are 10 mm length and 1.65 mm height, facilitating dense PCB mounting and integration. Seven open collector Darlington pairs integrated per chip. High current handling capacity of 500 mA per channel.

Maximum collector-emitter voltage rating of 50 V. Standard logic-level compatible input interface. Surface mount 16-Pin SOIC package design. Integral suppression diodes for inductive load protection. Wide operating temperature range from -20°C to 85°C.

NPN transistor configuration for reliable switching. Low collector-emitter saturation voltage (1.6 V max). Compact package size enables efficient board design. This device is suitable for applications in industrial control, automotive electronics, communication equipment, and general-purpose interfacing functions in embedded systems.

Explore a wide selection of semiconductor components like this in the Darlington Transistor category on EnvMart for your next electronic design project.

STMicroelectronics 7 Seven Darlington Array NPN 500 mA 50 V HFE 1000 16-Pin SOIC ULN2003D1013TR
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Frequently Asked Questions

The maximum continuous collector current for this model is 500 mA.

The maximum collector-emitter voltage rating is 50 V.

It has a minimum DC current gain (hFE) of 1000.

This model is housed in a 16-Pin SOIC surface mount package.

It operates reliably within a temperature range from -20°C to 85°C.

There are seven Darlington pairs integrated per chip.

It supports standard TTL and CMOS logic level interfaces.

Yes, it includes integral suppression diodes suitable for inductive load protection.

The dimensions are 10 mm in length and 1.65 mm in height.

The maximum collector-emitter saturation voltage is 1.6 V.

This array uses an NPN transistor configuration.

It is suitable for applications in industrial control, automotive electronics, and general-purpose interfacing in embedded systems.

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