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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.65mm |
| Length | 10mm |
| Model | ULN2003D1013TR |
| Mount Type | Surface |
| Series | ULN2003 |
| Maximum Operating Temperature | 85°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -20°C |
| Pin Count | 16 |
| Maximum Continuous Collector Current Ic | 500mA |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Number of Elements per Chip | 7 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| STMicroelectronics ULN2003D1013TR 7 Seven Darlington array NPN, 500 mA 50 V HFE | 1000, 16-Pin SOIC |
STMicroelectronics ULN2003D1013TR is a 7 seven Darlington array featuring NPN transistor pairs designed for power driving applications. It offers a maximum continuous collector current of 500 mA and can withstand a collector-emitter voltage of up to 50 V. The device is housed in a compact 16-Pin SOIC surface mount package.
This Darlington transistor array includes integral suppression diodes that protect against inductive load transients, making it ideal for switching inductive loads such as relays, solenoids, and motors commonly found in industrial automation and control systems.
The input configuration supports standard TTL and CMOS logic levels, simplifying interface with digital control circuits. It boasts a minimum DC current gain (hFE) of 1000, enabling efficient and reliable power amplification.
The device comfortably operates over a temperature range from -20°C to 85°C, suitable for various industrial and commercial applications including robotics, motor control, and automation systems.
The physical dimensions are 10 mm length and 1.65 mm height, facilitating dense PCB mounting and integration. Seven open collector Darlington pairs integrated per chip. High current handling capacity of 500 mA per channel.
Maximum collector-emitter voltage rating of 50 V. Standard logic-level compatible input interface. Surface mount 16-Pin SOIC package design. Integral suppression diodes for inductive load protection. Wide operating temperature range from -20°C to 85°C.
NPN transistor configuration for reliable switching. Low collector-emitter saturation voltage (1.6 V max). Compact package size enables efficient board design. This device is suitable for applications in industrial control, automotive electronics, communication equipment, and general-purpose interfacing functions in embedded systems.
Explore a wide selection of semiconductor components like this in the Darlington Transistor category on EnvMart for your next electronic design project.
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