STMicroelectronics STripFET F7 N-Channel MOSFET 90 A 60 V Enhancement Surface Mount 8-Pin PowerFLAT STL90N6F7

STMicroelectronics STL90N6F7 is a N-Channel MOSFET from the STripFET F7 series designed for high efficiency and fast switching applications. It supports a maximum continuous drain current of 90 A and a drain-source voltage rating of 60 V. Packaged in an 8-pin PowerFLAT surface mount configuration, this device is ideal for precise power management in electronic circuits.

This MOSFET offers a low on-state resistance of 5.4 milliohms, significantly reducing conduction losses and improving overall energy efficiency. The enhancement mode channel and typical gate charge of 25 nC enable rapid switching speeds, enhancing performance in high-frequency power electronics.

Thermal performance is maintained with a maximum power dissipation rating of 94 W and an extended operating temperature range from -55°C to 175°C, making it reliable across diverse industrial, automotive, and consumer electronics applications.

The compact package dimensions of 5.4 mm length, 6.35 mm width, and 0.95 mm height facilitate compact circuit designs. The device can safely handle gate-source voltages between -20 V and +20 V and features a forward voltage drop of 1.2 V, enabling effective voltage regulation in switching applications.

STMicroelectronics' STripFET F7 series MOSFETs are widely used in industrial power supplies, motor drives, automotive electronics, and consumer devices due to their robust design and superior electrical characteristics.

Designed with low on-state resistance for efficient power management. Enhancement mode N-channel MOSFET suitable for surface mount applications. Maximum power dissipation of 94 W ensures reliable thermal performance. Typical gate charge of 25 nC enables fast switching.

Wide operating temperature range from -55°C to 175°C for robust operation. Compact dimensions with 5.4 mm length, 6.35 mm width, and 0.95 mm height. Maximum drain-source resistance of 5.4 milliohms for minimal conduction losses.

Forward voltage drop of 1.2 V supports efficient circuit operation. Gate source voltage rating of -20 V to +20 V guarantees safe gate drive levels. Manufactured in China with high reliability standards.

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