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onsemi NPN Power Transistor, 16 A Collector Current, 250 V Collector-Emitter Voltage, TO-264 Package MJL21196G

Category Semiconductors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 37.8mm
Length 20.3mm
Model MJL21196G
Width 5.3mm
Mount Type Through Hole
Series MJL21196
Maximum Operating Temperature 150°C
Package Type TO-264
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 250V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 400V dc
Maximum Power Dissipation Pd 200W
Maximum DC Collector Current Idc 16A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This 3-pin transistor supports a maximum power dissipation of 200 W.
  • Configured as a single NPN type with a minimum current gain of 25.
  • Suitable for high-temperature operation from -65°C to 150°C.
  • Package type TO-264 ensures secure through-hole mounting.
  • Maximum transition frequency of 1 MHz enables efficient switching performance.
  • Maximum collector base voltage is 400 V DC, suitable for varied circuit demands.
  • Compact dimensions with height 37.8 mm, length 20.3 mm, and width 5.3 mm.

Product Description

onsemi MJL21196G is a high-performance NPN power transistor designed for demanding electronic component applications requiring high collector current and voltage ratings. Featuring a maximum DC collector current of 16 A and a collector-emitter voltage rating of 250 V, this transistor is delivered in a TO-264 package enabling through-hole mounting for enhanced mechanical stability within power circuits.

The device supports a maximum power dissipation of 200 W, allowing it to handle significant energy loads efficiently. Its transistor configuration is a single NPN type with a minimum DC current gain (hFE) of 25, making it reliable for amplification and switching tasks.

Designed to operate within a wide temperature range from -65°C to 150°C, the MJL21196G can be used in challenging thermal environments. It features a maximum transition frequency of 1 MHz, ensuring high-frequency switching suitability.

Electrical ratings include a maximum collector base voltage of 400 V DC and a maximum emitter base voltage of 5 V. The transistor comprises 3 pins and displays compact physical dimensions, height 37.8 mm, length 20.3 mm, and width 5.3 mm, suitable for integration into various modules and assemblies.

This product is ideal for industrial, electronic manufacturing, and power supply design use cases where robust NPN power transistors are critical. Package contents typically include the transistor supplied in a tube format for ease of insertion and handling.

This 3-pin transistor supports a maximum power dissipation of 200 W. Configured as a single NPN type with a minimum current gain of 25. Suitable for high-temperature operation from -65°C to 150°C. Package type TO-264 ensures secure through-hole mounting.

Maximum transition frequency of 1 MHz enables efficient switching performance. Maximum collector base voltage is 400 V DC, suitable for varied circuit demands. Compact dimensions with height 37.8 mm, length 20.3 mm, and width 5.3 mm.

Explore our wide range of semiconductor devices and bipolar transistors at EnvMart for high quality and reliable power transistor solutions.

Explore more products in our Semiconductors category.

onsemi NPN Power Transistor, 16 A Collector Current, 250 V Collector-Emitter Voltage, TO-264 Package MJL21196G
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