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Nexperia Darlington Transistor PNP 1 A 80 V Maximum Collector Emitter Voltage SOT-89 BST62115 BST62,115

Category Darlington Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.6mm
Length 4.6mm
Model BST62,115
Mount Type Surface
Series BST62
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic -1A
Maximum Collector Emitter Voltage Vceo 80V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 1000
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Emitter Saturation Voltage VceSAT -1.3V
Maximum Collector Base Voltage VCBO -90V
Maximum Collector Cut-off Current -50nA
Maximum Power Dissipation Pd 1.3W
Nexperia 1 Darlington Transistor PNP, -1 A 80 V HFE 1000, 3-Pin SOT-89

Key Features

  • PNP transistor polarity suitable for amplification and switching applications.
  • Maximum collector emitter voltage rating of 80 V for robust operation.
  • High minimum DC current gain (hFE) of 1000 enhances performance efficiency.
  • Low power dissipation of 1.3 W supports thermal management in compact circuits.
  • Optimized for surface mount technology with a compact SOT-89 package.
  • Operating temperature range from -65°C to 150°C ensures reliability under harsh conditions.
  • Maximum collector base voltage of -90 V and emitter base voltage of -5 V ensure safe operating limits.
  • Collector saturation voltage max of -1.3 V minimizes power loss during switching.

Product Description

The Nexperia BST62,115 is a high-performance 1 Darlington Transistor with PNP polarity, enclosed in a surface-mount SOT-89 package. It offers a maximum continuous collector current of 1 A and a maximum collector emitter voltage of 80 V, making it ideal for amplification and switching duties in electronic circuits.

Featuring a minimum DC current gain (hFE) of 1000, this transistor ensures efficient current amplification essential for various industrial and commercial electronics applications. The maximum power dissipation rating of 1.3 W supports sustainable operation inside compact devices where thermal constraints are critical.

Designed for surface mounting with a 3-pin SOT-89 package, the BST62,115 simplifies PCB design while maintaining reliable electrical characteristics. It operates reliably in a wide temperature range from -65°C to 150°C, suitable for demanding industrial environments.

The transistor features voltage ratings including maximum collector base voltage of -90 V and emitter base voltage of -5 V to prevent device damage during normal switching and amplification conditions. The maximum collector emitter saturation voltage is kept low at -1.3 V to optimize performance and reduce energy loss.

Physical dimensions are compact with a length of 4.6 mm and height of 1.6 mm, suitable for dense circuit boards and modern electronics manufacturing processes. Although this model does not meet automotive standards, it excels in general purpose industrial, laboratory, manufacturing, and consumer electronics applications.

PNP Darlington transistor configuration for enhanced gain and signal amplification. Surface mount 3-pin SOT-89 package supports automated PCB assembly. High current and voltage ratings for versatile electronic circuit integration.

Wide operating temperature range for robust reliability in harsh environments. Low power dissipation facilitates thermal management in compact devices.

This transistor is widely applicable in power amplification, switching circuits, drivers, and other electronic component designs requiring high gain and moderate voltage/current capability. It is an essential component in electronics assembly, industrial controls, and prototype developments.

Explore more Darlington Transistors and other semiconductor components categorized by Nexperia and other leading brands at EnvMart.

Nexperia Darlington Transistor PNP 1 A 80 V Maximum Collector Emitter Voltage SOT-89 BST62115 BST62,115
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Frequently Asked Questions

The maximum collector emitter voltage for this model is 80 V, ensuring robust operation in various applications.

This transistor features a minimum DC current gain (hFE) of 1000, which enhances its performance efficiency for amplification tasks.

The SOT-89 package has a length of 4.6 mm and a height of 1.6 mm, making it suitable for compact circuit designs.

The maximum continuous collector current for the BST62,115 is 1 A, allowing it to handle significant loads in electronic circuits.

It operates reliably within a temperature range from -65°C to 150°C, making it suitable for harsh environments.

The maximum power dissipation rating for this transistor is 1.3 W, which supports thermal management in compact devices.

The maximum collector base voltage is -90 V, ensuring safe operating limits during normal conditions.

The BST62,115 is a PNP Darlington transistor, optimized for amplification and switching applications.

The SOT-89 package features a 3-pin configuration, facilitating surface mount technology for PCB assembly.

The maximum emitter base voltage for this model is -5 V, which helps prevent device damage during operation.

This model is suitable for power amplification, switching circuits, and other electronic component designs requiring high gain.

The maximum collector cut-off current for this transistor is -50 nA, indicating its efficiency in minimizing leakage current.

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