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STMicroelectronics STripFET N-Channel MOSFET 35 A 60 V Enhancement 3-Pin TO-252 STD35NF06T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD35NF06T4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 80W |
| Typical Gate Charge Qg @ Vgs | 44.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features an enhancement mode channel with a maximum drain-source resistance of 20 milliohms.
- Designed for surface mounting, it supports a maximum power dissipation of 80 watts and operates from -55°C to 175°C.
- The device has a typical gate charge of 44.5 nanocoulombs and voltage ratings of -20 V to +20 V at the gate-source.
- Its dimensions are compact with a height of 2.4 mm, length of 6.6 mm, and width of 6.2 mm, suitable for space-constrained designs.
- The MOSFET does not carry automotive or special standards approvals, but is well suited for power switching and amplification in electronic circuits.
Product Description
STMicroelectronics STD35NF06T4 is a high-performance STripFET N-Channel MOSFET designed for electronic applications requiring efficient power handling and switching.
This enhancement mode device features a maximum continuous drain current of 35 A and a maximum drain-source voltage of 60 V, allowing it to handle significant current loads reliably.
Packaged in a 3-pin TO-252 surface-mount form factor, it offers easy PCB integration for industrial, manufacturing, automotive (non-approved), and consumer electronics circuits. The MOSFET has a low maximum drain-source resistance of 20 milliohms, which minimizes conduction losses and improves power efficiency.
It dissipates up to 80 W, operating over a wide temperature range from -55°C to 175°C, making it suitable for demanding environments. Key electrical characteristics include a typical gate charge of 44.5 nC and a gate-source voltage range of -20 V to +20 V, ensuring effective gate control and switching speed.
Its compact dimensions - 2.4 mm height, 6.6 mm length, and 6.2 mm width - facilitate applications where board space is limited.
Applications include power supply regulation, motor control, load switching, and other power management tasks in industrial plants, laboratory equipment, manufacturing automation, and HVAC systems.
This device features an enhancement mode N-channel and surface mount TO-252 package. It supports a maximum drain current of 35 A and a drain-source voltage of 60 V. Maximum power dissipation is rated at 80 W for high efficiency.
Operating temperature ranges from -55°C to 175°C for industrial reliability. Low drain-source resistance ensures minimal conduction losses.
STMicroelectronics products provide reliable solutions for power switching, amplification, and circuit protection. Explore more power semiconductors and accessories in the Electronics & Electricals > Semiconductor > MOSFETs category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 A.
The maximum drain-source voltage is 60 V.
It supports a maximum power dissipation of 80 watts.
The dimensions are 2.4 mm in height, 6.6 mm in length, and 6.2 mm in width.
The typical gate charge is 44.5 nanocoulombs.
It operates over a wide temperature range from -55°C to 175°C.
This model is packaged in a 3-pin TO-252 surface-mount form factor.
The maximum drain-source resistance is 20 milliohms.
The gate-source voltage range is -20 V to +20 V.
It is suitable for applications including power supply regulation, motor control, and load switching.
This model features an enhancement mode N-channel.
The country of origin is India.
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