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STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252 STD60NF06T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD60NF06T4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 16mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 60 A ensures robust performance.
- Maximum drain-source voltage rated at 60 V.
- Low on-resistance of 16 milliohms reduces power loss.
- Features ultra-low gate charge of 49 nC for efficient switching.
- Maximum power dissipation rating of 110 W.
- Operates reliably across a temperature range from -55°C to 175°C.
- Compact TO-252 package with dimensions 6.6 mm length, 6.2 mm width, and 2.4 mm height.
- Designed with STMicroelectronics’ STripFET II technology for low gate charge and resistance.
Product Description
STMicroelectronics STD60NF06T4 is a high-performance N-Channel MOSFET transistor designed for robust power switching applications. This device utilizes the advanced STripFET II technology, offering a low gate charge combined with very low drain-source on-resistance, enabling efficient power management and reduced thermal dissipation.
Encapsulated in a 3-pin TO-252 package suitable for surface mount assembly, this MOSFET supports a maximum continuous drain current of 60 A and a breakdown voltage of 60 V, making it well-suited for medium to high power industrial, automotive, and electronic applications.
The device delivers a maximum power dissipation of 110 W and operates reliably in extreme temperature conditions ranging from -55°C to 175°C. Its typical gate charge of 49 nC facilitates fast switching speeds and high efficiency in power conversion circuits.
Maximum continuous drain current of 60 A. Maximum drain-source voltage of 60 V. Low on-resistance of 16 mΩ reduces conduction losses. Maximum power dissipation rating of 110 W. Wide operating temperature range from -55°C to 175°C for harsh environments.
Compact TO-252 package dimensions: 6.6 mm length, 6.2 mm width, 2.4 mm height. Maximum gate-source voltage of -20 to +20 V. Typical gate charge of 49 nC supports efficient switching. Forward voltage of 1.3 V ensures low energy loss.
This component is ideal for power management in industrial manufacturing, automotive electronics, and other demanding applications requiring reliable, high current, and high voltage switching capabilities.
Explore a wide range of semiconductor components and power MOSFETs in the Electronics & Electricals category at EnvMart to find suitable solutions for your industrial and electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 60 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The on-resistance of this model is 16 milliohms, which helps reduce power loss.
The typical gate charge for this model is 49 nC, facilitating efficient switching.
The TO-252 package dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
This model has a maximum power dissipation rating of 110 W.
The operating temperature range for this MOSFET is from -55°C to 175°C.
This MOSFET supports surface mount assembly.
The maximum gate-source voltage for this model is -20 to +20 V.
This model belongs to the STripFET II series by STMicroelectronics.
This MOSFET is suitable for medium to high power industrial, automotive, and electronic applications.
The forward voltage of this model is 1.3 V, which contributes to low energy loss.
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