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STMicroelectronics STripFET N-Channel MOSFET, 35 A, 100 V Enhancement Mode, 3-Pin TO-220 STP30NF10

Category MOSFETs Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model STP30NF10
Width 4.6mm
Mount Type Through Hole
Series STripFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 35A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 45mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 115W
Typical Gate Charge Qg @ Vgs 40nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • N-Channel STripFET with Enhancement mode operation.
  • Maximum continuous drain current of 35 amperes for high power applications.
  • Drain-source voltage rating of 100 volts ensuring robust switching capability.
  • Low drain-source resistance of 45 milliohms to minimize power dissipation.
  • Typical gate charge of 40 nanocoulombs facilitating fast switching.
  • Wide operating temperature range from -55°C to 175°C for demanding environments.
  • TO-220 through hole mount package for easy PCB assembly and heat dissipation.
  • Maximum power dissipation of 115 watts supports high load conditions.

Product Description

STMicroelectronics STP30NF10 is an N-Channel Enhancement Mode STripFET MOSFET designed for power switching and amplification applications. Packaged in a reliable 3-pin TO-220 through-hole package, it is suitable for use in power electronic circuits requiring efficient switching up to 35 A continuous drain current and a voltage rating of 100 V. The device offers a low typical on-resistance of 45 milliohms which minimizes conduction losses and ensures efficient thermal management.

Engineered for versatile industrial use, its typical gate charge of 40 nC facilitates rapid switching, important for applications in power supplies, motor control, and other high-frequency operations. With a maximum power dissipation of 115 W and an operating temperature range from -55°C to 175°C, it provides robust operation under harsh conditions including industrial, manufacturing, and automation environments.

The forward voltage drop of 1.3 V ensures efficient conduction while the wide gate-source voltage range between -20 V and +20 V allows for reliable control in various circuit configurations. The TO-220 package simplifies mounting and heat sinking, enhancing performance stability in thermal stress scenarios. This MOSFET’s pin configuration and mounting style make it compatible with standard PCB designs, facilitating integration across a broad range of electronic applications.

Common industrial applications include power management in electronic devices, switching regulators, motor drivers, and load switching in systems requiring high current and voltage tolerance. This component is RoHS compliant and designed without automotive standard certification, focusing on general semiconductor applications.

N-Channel STripFET enhances power switching capabilities. 35 A maximum continuous drain current suitable for robust power circuits. 100 V drain-source voltage withstand ensures reliability under high voltage conditions. 45 milliohm maximum drain-source resistance reduces power loss.

3-pin TO-220 through-hole package supports effective thermal dissipation. Operating temperature from -55°C to 175°C meets industrial thermal requirements. Typical gate charge of 40 nanocoulombs enables fast switching speed.

Maximum power dissipation rated at 115 watts for heavy-duty use. Forward voltage of 1.3 volts typical minimizes power consumption. Versatile use in industrial, manufacturing, HVAC, motor control, and power supply applications.

Explore more MOSFETs and semiconductor options in the Electronics & Electricals category at EnvMart for comprehensive solutions.

STMicroelectronics STripFET N-Channel MOSFET, 35 A, 100 V Enhancement Mode, 3-Pin TO-220 STP30NF10
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Frequently Asked Questions

The maximum continuous drain current for this model is 35 A, making it suitable for high power applications.

The STP30NF10 has a drain-source voltage rating of 100 V, ensuring robust switching capability in power circuits.

It has a typical gate charge of 40 nanocoulombs, which facilitates fast switching in various applications.

The maximum power dissipation for the STP30NF10 is rated at 115 watts, supporting high load conditions.

This MOSFET is packaged in a 3-pin TO-220 through-hole package, which simplifies PCB assembly and heat dissipation.

The operating temperature range for the STP30NF10 is from -55°C to 175°C, suitable for demanding environments.

The maximum drain-source resistance is 45 milliohms, which helps minimize power dissipation during operation.

The dimensions of this model are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.

The typical forward voltage drop for the STP30NF10 is 1.3 V, which minimizes power consumption during conduction.

This model is suitable for power management in electronic devices, switching regulators, motor drivers, and load switching in high current and voltage systems.

The maximum gate-source voltage for the STP30NF10 is between -20 V and +20 V, allowing for reliable control in various circuit configurations.

This MOSFET uses an N-channel configuration, which is typical for enhancement mode operation in power switching applications.

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