Microchip Type N-Channel MOSFET 5 A 1700 V TO-247 Package MSC750SMA170B

Microchip MSC750SMA170B Type N-Channel MOSFET with a 5 A continuous drain current and 1700 V maximum drain-source voltage in a TO-247 package is engineered for demanding power electronic applications.

This Power MOSFET offers low capacitance and minimal gate charge, enabling fast switching speeds which reduce losses and improve efficiency. The device is designed for through-hole mounting with a sturdy TO-247 package that offers excellent thermal handling capabilities, suitable for high-power circuits and industrial environments.

With a maximum power dissipation of 1.6 W and a maximum operating temperature of 175°C, it provides stable operation even under high junction temperatures. The MOSFET also features a forward voltage of 1.8 V and a maximum drain-source resistance of 8 Ω, ensuring low conduction losses.

The device supports a gate-source voltage of up to 2 V, allowing for precise gate control and fast switching performance. Its wide operating temperature range from -55°C to 175°C makes it suitable for use in harsh environments and a variety of industrial, power supply, and motor control applications.

Compliant with RoHS standards, the MSC750SMA170B is environmentally friendly and designed to meet contemporary regulatory requirements. Its robust body diode provides superior avalanche ruggedness, enhancing device reliability in inductive load switching.

Industrial applications for this MOSFET include power management in electronic equipment, motor drives, high-voltage DC-DC converters, renewable energy inverters, and other high-voltage power electronics.

Equipped with a TO-247 package for effective heat dissipation. Designed for through-hole mounting enhancing durability in applications. Offers low gate charge of 11 nC for fast switching speeds. Operates reliably up to a maximum junction temperature of 175°C.

Maximum drain-source resistance is 8 Ω, ensuring efficient conduction. Features forward voltage of 1.8 V contributing to low power loss. Supports a maximum gate-source voltage of 2 V, suitable for precise control. Operating temperature range from -55°C to 175°C for versatile industrial use.

Compliant with RoHS standards for environmental safety. Robust body diode with superior avalanche ruggedness enhances reliability. Explore a wide range of power semiconductors and MOSFETs at EnvMart for your industrial and electronic component needs.