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Microchip Type N-Channel Power MOSFET, 140 A, 12 V, 4-Pin TO-247 MSC060SMA070B4

Category Power MOSFET Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Model MSC060SMA070B4
Mount Type Through Hole
Series MSC060SMA070B4
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 4
Channel Type Type N
Maximum Continuous Drain Current Id 140A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 8Ω
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 56nC
Maximum Gate Source Voltage Vgs 2V
Forward Voltage Vf 1.8V

Key Features

  • High maximum continuous drain current of 140 A.
  • 12 V maximum drain source voltage supports medium voltage designs.
  • Low drain-source resistance of 8 Ω enhances conduction efficiency.
  • 4-pin TO-247 through-hole package for secure mounting and heat dissipation.
  • Fast switching enabled by low internal gate resistance and 56 nC typical gate charge.
  • Maximum power dissipation rating of 1.6 W.
  • Wide operating temperature range from -55°C to 175°C ensures reliability.
  • Stable body diode with superior avalanche ruggedness.

Product Description

Microchip MSC060SMA070B4 Type N-Channel power MOSFET is engineered to deliver enhanced performance in high voltage and high current applications. With a maximum continuous drain current of 140 A and drain-source voltage rating of 12 V, this device suits demanding power electronics designs in industrial, automotive, and power management domains.

Its low drain-source resistance of 8 Ω and fast switching characteristics afforded by low internal gate resistance and a typical gate charge of 56 nC optimize efficiency and thermal performance. The MOSFET is housed in a robust 4-pin TO-247 through-hole package, facilitating effective heat dissipation and secure PCB mounting.

The device sustains a maximum power dissipation of 1.6 W with a wide operational temperature range from -55°C to 175°C, ensuring dependable operation under extreme conditions. The stable body diode provides superior avalanche ruggedness, increasing reliability in switching circuits.

Designed for applications requiring fast switching speed and stable high junction temperature operation, this MOSFET complies with RoHS directives, supporting environmentally conscious engineering practices.

High maximum continuous drain current of 140 A. 12 V maximum drain-source voltage. Low drain-source resistance (8 Ω) for efficiency. Fast switching due to low gate charge (56 nC) and internal gate resistance. Wide operating temperature range (-55°C to 175°C).

Robust 4-pin TO-247 through-hole package. Maximum power dissipation of 1.6 W. Stable operation with superior avalanche ruggedness. RoHS compliant for environmental safety. Forward voltage of 1.8 V and maximum gate-source voltage of 2 V.

This Microchip MSC060SMA070B4 Power MOSFET is ideal for use in industrial power supplies, motor control applications, automotive electronics, and other high-performance semiconductor applications. Explore related power semiconductors and components on EnvMart for comprehensive solutions.

Microchip Type N-Channel Power MOSFET, 140 A, 12 V, 4-Pin TO-247 MSC060SMA070B4
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Frequently Asked Questions

The maximum continuous drain current of the Microchip MSC060SMA070B4 is 140 A.

This model has a maximum drain-source voltage rating of 12 V.

The drain-source resistance of the MSC060SMA070B4 is 8 Ω, which enhances conduction efficiency.

The typical gate charge for this MOSFET is 56 nC at a gate-source voltage of 2 V.

The operating temperature range for the MSC060SMA070B4 is from -55°C to 175°C.

This MOSFET is housed in a 4-pin TO-247 through-hole package.

The maximum power dissipation rating for the MSC060SMA070B4 is 1.6 W.

This model is suitable for industrial power supplies, motor control applications, and automotive electronics.

The forward voltage of the MSC060SMA070B4 is 1.8 V.

The MSC060SMA070B4 complies with RoHS standards, supporting environmentally conscious engineering practices.

The maximum gate-source voltage for this MOSFET is 2 V.

This MOSFET has a Type N channel configuration.

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