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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC060SMA070B4 |
| Mount Type | Through Hole |
| Series | MSC060SMA070B4 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Microchip MSC060SMA070B4 Type N-Channel power MOSFET is engineered to deliver enhanced performance in high voltage and high current applications. With a maximum continuous drain current of 140 A and drain-source voltage rating of 12 V, this device suits demanding power electronics designs in industrial, automotive, and power management domains.
Its low drain-source resistance of 8 Ω and fast switching characteristics afforded by low internal gate resistance and a typical gate charge of 56 nC optimize efficiency and thermal performance. The MOSFET is housed in a robust 4-pin TO-247 through-hole package, facilitating effective heat dissipation and secure PCB mounting.
The device sustains a maximum power dissipation of 1.6 W with a wide operational temperature range from -55°C to 175°C, ensuring dependable operation under extreme conditions. The stable body diode provides superior avalanche ruggedness, increasing reliability in switching circuits.
Designed for applications requiring fast switching speed and stable high junction temperature operation, this MOSFET complies with RoHS directives, supporting environmentally conscious engineering practices.
High maximum continuous drain current of 140 A. 12 V maximum drain-source voltage. Low drain-source resistance (8 Ω) for efficiency. Fast switching due to low gate charge (56 nC) and internal gate resistance. Wide operating temperature range (-55°C to 175°C).
Robust 4-pin TO-247 through-hole package. Maximum power dissipation of 1.6 W. Stable operation with superior avalanche ruggedness. RoHS compliant for environmental safety. Forward voltage of 1.8 V and maximum gate-source voltage of 2 V.
This Microchip MSC060SMA070B4 Power MOSFET is ideal for use in industrial power supplies, motor control applications, automotive electronics, and other high-performance semiconductor applications. Explore related power semiconductors and components on EnvMart for comprehensive solutions.
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