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Microchip Type N-Channel MOSFET, 140 A, 12 V, 4-Pin TO-247 MSC035SMA170B4

Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Model MSC035SMA170B4
Mount Type Through Hole
Series MSC035SMA170B4
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 4
Channel Type Type N
Maximum Continuous Drain Current Id 140A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 8Ω
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 178nC
Maximum Gate Source Voltage Vgs 2V
Forward Voltage Vf 1.8V

Key Features

  • Features low capacitances and low gate charge for efficient switching.
  • Fast switching speed enabled by low internal gate resistance.
  • Operates stably up to a maximum junction temperature of 175 °C.
  • Includes a fast and reliable body diode for superior avalanche ruggedness.
  • Complies with RoHS standards for environmental safety.
  • Designed for through hole mounting with 4 pins in a TO-247 package.
  • Maximum power dissipation is 1.6 W ensuring long-term reliability.
  • Gate-source voltage limited to 2 V to protect device integrity.

Product Description

Microchip MSC035SMA170B4 is a high-performance Type N-Channel MOSFET designed for demanding power semiconductor applications requiring efficient switching and thermal stability. It supports a maximum continuous drain current of 140 A and a voltage rating of 12 V, packaged in a 4-pin TO-247 through-hole format suitable for easy PCB integration.

Built to leverage silicon carbide technology, this MOSFET surpasses traditional silicon MOSFETs in switching speed due to its low internal gate resistance and minimal capacitances. It operates reliably at junction temperatures up to 175 °C and maintains stable performance over a wide temperature range from -55 °C upwards.

The device includes a fast and reliable body diode offering superior avalanche ruggedness, enhancing its durability in industrial, automotive, and power management applications. Its maximum power dissipation is rated at 1.6 W, emphasizing efficient thermal management in demanding conditions.

This MOSFET complies with RoHS directives, ensuring it meets environmental safety standards. It is ideal for use in industrial power electronics, automotive control systems, power supplies, and other applications requiring reliable high-current switching.

Low capacitances and low gate charge enable fast switching speeds. Stable operation at high junction temperatures up to 175 °C. Robust body diode with superior avalanche ruggedness. Compact 4-pin TO-247 through hole package.

RoHS compliant for environmentally safe applications. Maximum continuous drain current of 140 A and drain-source voltage of 12 V. Low gate-source voltage maximum of 2 V to safeguard gate integrity. Supports operating temperatures from -55 °C to 175 °C for flexible use environments.

Typical gate charge of 178 nC supports efficient switching. Forward voltage of 1.8 V typical improves efficiency.

This Microchip MOSFET MSC035SMA170B4 is engineered for electronics manufacturing, power management, and automotive industries requiring high-reliability power semiconductor devices. For more components and detailed specifications, browse the Semiconductor MOSFET category at EnvMart.

Microchip Type N-Channel MOSFET, 140 A, 12 V, 4-Pin TO-247 MSC035SMA170B4
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Frequently Asked Questions

The maximum continuous drain current for the MSC035SMA170B4 is 140 A.

This MOSFET has a maximum drain-source voltage rating of 12 V.

It operates reliably within a temperature range from -55 °C to 175 °C.

This model is packaged in a 4-pin TO-247 format, suitable for through-hole mounting.

The typical gate charge for the MSC035SMA170B4 is 178 nC.

The maximum power dissipation for this MOSFET is rated at 1.6 W.

This model features a Type N channel.

The maximum gate-source voltage is limited to 2 V.

Yes, it complies with RoHS standards for environmental safety.

The typical forward voltage for this model is 1.8 V.

The maximum drain-source resistance is 8 Ω.

It is designed for use in industrial power electronics, automotive control systems, and power supplies.

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