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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC035SMA170B4 |
| Mount Type | Through Hole |
| Series | MSC035SMA170B4 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 178nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Microchip MSC035SMA170B4 is a high-performance Type N-Channel MOSFET designed for demanding power semiconductor applications requiring efficient switching and thermal stability. It supports a maximum continuous drain current of 140 A and a voltage rating of 12 V, packaged in a 4-pin TO-247 through-hole format suitable for easy PCB integration.
Built to leverage silicon carbide technology, this MOSFET surpasses traditional silicon MOSFETs in switching speed due to its low internal gate resistance and minimal capacitances. It operates reliably at junction temperatures up to 175 °C and maintains stable performance over a wide temperature range from -55 °C upwards.
The device includes a fast and reliable body diode offering superior avalanche ruggedness, enhancing its durability in industrial, automotive, and power management applications. Its maximum power dissipation is rated at 1.6 W, emphasizing efficient thermal management in demanding conditions.
This MOSFET complies with RoHS directives, ensuring it meets environmental safety standards. It is ideal for use in industrial power electronics, automotive control systems, power supplies, and other applications requiring reliable high-current switching.
Low capacitances and low gate charge enable fast switching speeds. Stable operation at high junction temperatures up to 175 °C. Robust body diode with superior avalanche ruggedness. Compact 4-pin TO-247 through hole package.
RoHS compliant for environmentally safe applications. Maximum continuous drain current of 140 A and drain-source voltage of 12 V. Low gate-source voltage maximum of 2 V to safeguard gate integrity. Supports operating temperatures from -55 °C to 175 °C for flexible use environments.
Typical gate charge of 178 nC supports efficient switching. Forward voltage of 1.8 V typical improves efficiency.
This Microchip MOSFET MSC035SMA170B4 is engineered for electronics manufacturing, power management, and automotive industries requiring high-reliability power semiconductor devices. For more components and detailed specifications, browse the Semiconductor MOSFET category at EnvMart.
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