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Infineon IGBT Single Transistor IC 4 A 600 V PG-SOT223 IKN04N60RC2ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKN04N60RC2ATMA1 |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-SOT223 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC47/20/22 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Maximum Power Dissipation Pd | 6.8W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- The device supports a maximum power dissipation of 6.8 W for efficient thermal management.
- Maximum gate-emitter voltage is rated at 20 V to ensure robust control.
- The transistor features a maximum saturation voltage of 2.3 V for optimized switching performance.
- Operating temperature range spans from -40°C to 150°C for wide applications.
- Complies with JEDEC standards 47/20/22 ensuring quality and reliability.
- The integrated diode improves performance, controllability, and reliability over previous designs.
- This transistor is suitable for industrial, automotive, and power electronics applications.
Product Description
Infineon IKN04N60RC2ATMA1 is an advanced IGBT (Insulated Gate Bipolar Transistor) Single Transistor IC designed for efficient switching applications, supporting a maximum continuous collector current of 4 A and a collector emitter voltage of 600 V. Packaged in a compact PG-SOT223 form factor, it offers space-saving integration in power electronics circuits.
With a maximum power dissipation of 6.8 W, this transistor operates reliably within a broad temperature range from -40°C to 150°C, making it suitable for harsh industrial and automotive environments. The device’s maximum gate-emitter voltage of 20 V and maximum saturation voltage of 2.3 V facilitate efficient switching with minimized losses.
Designed according to strict JEDEC47/20/22 standards, this IGBT ensures consistent performance and durability. The monolithically integrated diode enhances controllability and reliability compared to previous RC-DF models, making it ideal for modern electronics requiring precise power switching and protection.
This transistor is widely applicable in industrial automation, power supply circuits, HVAC systems, and electric motor drives, where precise control and high efficiency are fundamental.
The device supports a maximum power dissipation of 6.8 W for efficient thermal management. Maximum gate-emitter voltage is rated at 20 V to ensure robust control. The transistor features a maximum saturation voltage of 2.3 V for optimized switching performance.
Operating temperature range spans from -40°C to 150°C for wide applications. Complies with JEDEC standards 47/20/22 ensuring quality and reliability. The integrated diode improves performance, controllability, and reliability over previous designs.
This transistor is suitable for industrial, automotive, and power electronics applications. Explore a full range of semiconductor components and power transistors on EnvMart to support your advanced electronics projects and industrial automation needs.
Explore more products in our IGBTs category.
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Frequently Asked Questions
The maximum continuous collector current for the IKN04N60RC2ATMA1 is 4 A.
This model has a maximum collector emitter voltage of 600 V.
It supports a maximum power dissipation of 6.8 W for efficient thermal management.
The operating temperature range spans from -40°C to 150°C.
The maximum gate-emitter voltage for this transistor is rated at 20 V.
The maximum saturation voltage is 2.3 V, optimizing switching performance.
This IGBT is packaged in a compact PG-SOT223 form factor.
It complies with JEDEC standards 47/20/22, ensuring quality and reliability.
This transistor is suitable for industrial, automotive, and power electronics applications.
Yes, it features a monolithically integrated diode that enhances performance and reliability.
The country of origin for the IKN04N60RC2ATMA1 is India.
Key features include a maximum power dissipation of 6.8 W, a maximum gate-emitter voltage of 20 V, and a wide operating temperature range from -40°C to 150°C.
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