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Nexperia Bipolar Transistor PNP, 3-Pin DFN1110D-3 Package, -500 mA Collector Current, -45 V Collector Emitter BC807-40QB-QZ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC807-40QB-QZ
Mount Type Surface
Series BC807QB-Q
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 250
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -500mA
Transistor Configuration PNP

Key Features

  • This transistor supports a maximum collector current of -500 mA.
  • Maximum collector-emitter voltage is rated at -45 V allowing moderate voltage operation.
  • It features a compact DFN1110D-3 leadless stylish package with a low height of 0.5 mm.
  • Ideal for automated optical inspection due to side-wettable flanks on the package.
  • The transistor delivers a minimum DC current gain (hFE) of 250 ensuring efficient amplification.
  • Automotive standard compliant with AEC-Q101 qualification.
  • High power dissipation and current handling capabilities make it suitable for demanding electronic circuits.
  • Operates reliably from -55°C to 150°C, supporting harsh environments.

Product Description

The Nexperia BC807-40QB-QZ is a high-quality bipolar transistor featuring a PNP configuration designed for general-purpose applications in electronic circuits. It is housed in an ultra-compact DFN1110D-3 plastic surface-mount package, also known as SOT8015, that includes side-wettable flanks facilitating reliable solder inspection during automated optical inspection (AOI) processes.

This transistor supports a maximum DC collector current of -500 mA and a maximum collector-emitter voltage of -45 V, making it well-suited for moderate power amplification needs. The device operates efficiently across a wide temperature range from -55°C to 150°C, ensuring stable performance in industrial, automotive, and consumer electronic applications.

Its minimum DC current gain (hFE) of 250 guarantees solid amplification characteristics, while the maximum emitter-base voltage of -5 V and maximum collector-base voltage of -50 V define its robust electrical limits. The package's low height of 0.5 mm and small footprint enable designers to save PCB space without compromising reliability.

Meeting the stringent AEC-Q101 automotive standard certification, this transistor is ideal for automotive electronics and other demanding environments. The product complies with the RoHS directive, ensuring environmentally responsible production and usage.

Supports a collector current up to -500 mA. Maximum collector-emitter voltage of -45 V. Complies with AEC-Q101 automotive standard. Low profile DFN1110D-3 surface-mount plastic package. Wide operating temperature range from -55°C to 150°C.

Minimum current gain of 250 (hFE). High power dissipation capability. Side-wettable flanks for automated optical inspection. RoHS compliant for environmental safety. Smaller footprint compared to conventional leaded SMD packages.

This transistor is suitable for various industrial, automotive, laboratory, manufacturing, and consumer electronic applications where reliable switching and amplification are required. Designers benefit from its compact size, high reliability, and proven electrical performance. Explore more semiconductor components and Bipolar Transistors on EnvMart for integrated circuit design and repair needs.

Nexperia Bipolar Transistor PNP, 3-Pin DFN1110D-3 Package, -500 mA Collector Current, -45 V Collector Emitter BC807-40QB-QZ
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Frequently Asked Questions

The maximum collector current for this model is -500 mA.

The maximum collector-emitter voltage is rated at -45 V.

This transistor operates reliably from -55°C to 150°C.

The minimum DC current gain (hFE) is 250, ensuring efficient amplification.

It is housed in a DFN1110D-3 plastic surface-mount package.

Yes, it complies with the AEC-Q101 automotive standard.

The DFN1110D-3 package has a low height of 0.5 mm, making it compact.

The maximum emitter-base voltage (VEBO) is -5 V.

This transistor is suitable for various industrial, automotive, laboratory, manufacturing, and consumer electronic applications.

The maximum collector-base voltage (VCBO) is -50 V.

This model complies with the RoHS directive for environmental safety.

The transistor has a pin count of 3.

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