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Toshiba Audio Frequency Low Noise Amplifier Type N-Channel Junction Transistor 10 V 150 mW 3-Pin S-MINI 2SK209-GR(TE85L,F)
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Model | 2SK209-GR(TE85L,F) |
| Series | 2SK209 |
| Configuration | Junction Type |
| Maximum Operating Temperature | 125°C |
| Package Type | S-MINI |
| Sub Type | Audio Frequency Low Noise Amplifier |
| Minimum Operating Temperature | 25°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Drain Source Voltage Vds | 10V |
| Maximum Power Dissipation Pd | 150mW |
| Drain Source Current Ids | 14 mA |
Key Features
- Designed for audio frequency low noise amplifier applications.
- N-channel junction configuration for effective amplification.
- Compact 3-pin S-MINI package ensures easy integration.
- Maximum drain-source voltage of 10 V for reliable operation.
- Drain source current of 14 mA suited for low power applications.
- Power dissipation rating of 150 mW for stable performance.
- Operating temperature range from 25°C to 125°C.
- Compliant with RoHS standards for environmental safety.
Product Description
Toshiba 2SK209-GR(TE85L,F) is a junction type N-channel field effect transistor specifically designed for audio frequency low noise amplifier applications. This transistor operates at a maximum drain-source voltage of 10 V and supports a maximum power dissipation of 150 mW, making it suitable for sensitive audio amplification circuits that require minimal noise interference.
The device's 3-pin S-MINI package provides a compact form factor facilitating easy PCB integration for electronic component manufacturing and repair. It achieves a drain-source current of 14 mA, which aids in providing steady and precise amplification in audio equipment.
Engineered from silicon material, the transistor offers robust performance within the operating temperature range of 25°C to 125°C, ensuring durability in various industrial and commercial electronic scenarios.
Owing to its low-noise characteristics, this transistor is ideal for use in audio devices, low distortion amplifiers, and other sensitive electronic instrumentation where signal integrity is critical. It finds applications in industrial electronics, audio component manufacturing, and laboratory equipment.
The transistor fully complies with RoHS environmental standards, confirming its adherence to regulatory requirements for hazardous substance restrictions. Designed for audio frequency low noise amplifier applications. N-channel junction configuration for effective amplification.
Compact 3-pin S-MINI package ensures easy integration. Maximum drain-source voltage of 10 V for reliable operation. Drain source current of 14 mA suited for low power applications. Power dissipation rating of 150 mW for stable performance.
Operating temperature range from 25°C to 125°C. Compliant with RoHS standards for environmental safety.
This transistor is manufactured in India and is supplied new, making it suitable for industrial, electronic manufacturing, and repair use cases. Explore the full range of semiconductor products at EnvMart to find compatible components for your next project.
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Frequently Asked Questions
The maximum drain-source voltage for the Toshiba 2SK209-GR(TE85L,F) is 10 V, ensuring reliable operation in low power applications.
This model has a power dissipation rating of 150 mW, providing stable performance for audio frequency applications.
The operating temperature range for this transistor is from 25°C to 125°C, allowing it to function effectively in various environments.
It features a junction type N-channel configuration, which is effective for amplification in audio applications.
This transistor has a 3-pin S-MINI package, facilitating easy integration into electronic circuits.
The maximum drain source current for this model is 14 mA, which is suitable for low power applications.
Yes, the 2SK209-GR(TE85L,F) is compliant with RoHS standards, confirming its adherence to hazardous substance restrictions.
This transistor is designed for audio frequency low noise amplifier applications, making it suitable for sensitive audio equipment.
The 2SK209-GR(TE85L,F) is manufactured in India.
This model is categorized as an audio frequency low noise amplifier, specifically designed for minimal noise interference.
This transistor is engineered from silicon material, which contributes to its performance in electronic applications.
The S-MINI package type provides a compact form factor, making it easier to integrate into printed circuit boards (PCBs) for electronic manufacturing.
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