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Nexperia 1 A NPN Low Saturation Voltage Transistor 180 V 3-Pin SOT-23 PBHV8118T,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 6.7mm
Model PBHV8118T,215
Width 7.3mm
Mount Type Surface
Series PBHV8118T
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 180V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 400V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum collector current of 1 ampere for robust switching performance.
  • Collector-emitter voltage rating of 180 volts ensures high voltage tolerance.
  • Compact 3-pin SOT-23 surface mount package for space-saving designs.
  • High current gain minimum of 100 for efficient amplification.
  • Low power dissipation up to 300 milliwatts to reduce heat generation.
  • Wide operating temperature range from -55°C to 150°C for reliability.
  • Transition frequency of 100 MHz suitable for high-speed switching.
  • Conforms to RoHS standards and automotive grade AEC-Q101 certified.

Product Description

Nexperia PBHV8118T,215 is a 1 A NPN bipolar junction transistor designed for low saturation voltage and high efficiency in switching and digital applications. Housed in a compact 3-pin SOT-23 surface mount package, this transistor offers a maximum collector emitter voltage of 180 V and a maximum collector current rating of 1 A.

The device exhibits a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 300 mW, providing efficient performance with reduced heat generation. It operates reliably across a wide temperature range of -55°C to 150°C and has a maximum transition frequency (ft) of 100 MHz, making it suitable for high-speed switching circuits and signal amplification.

Its compact dimensions (height 1.1 mm, length 6.7 mm, width 7.3 mm) allow it to fit in space-constrained designs, while the transistor features a typical NPN polarity and single configuration packaged for surface mount applications.

This transistor is compliant with RoHS environmental standards and meets the automotive standard AEC-Q101, ensuring quality and reliability in automotive and industrial environments.

Maximum collector current: 1 A. Maximum collector-emitter voltage: 180 V. Surface mount SOT-23 package. High current gain minimum of 100. Maximum power dissipation of 300 mW. Operating temperature from -55°C to 150°C. Transition frequency of 100 MHz.

RoHS compliant and automotive grade AEC-Q101 certified. Compact dimensions for efficient PCB layout.

This transistor is suitable for industrial, automotive, and consumer electronics applications that require efficient switching and low saturation voltage. It is ideal for signal amplification, switching regulators, and digital circuit interfaces.

Explore further high-quality Bipolar Transistors, semiconductors, and electronic components available in the Nexperia product range on EnvMart.

Nexperia 1 A NPN Low Saturation Voltage Transistor 180 V 3-Pin SOT-23 PBHV8118T,215
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Frequently Asked Questions

The maximum collector current rating for this transistor is 1 ampere.

The collector-emitter voltage rating of this model is 180 volts.

It is housed in a compact 3-pin SOT-23 surface mount package.

The minimum DC current gain (hFE) for this transistor is 100.

The maximum power dissipation for this unit is 300 milliwatts.

The operating temperature range for this model is from -55°C to 150°C.

The maximum transition frequency (ft) of this transistor is 100 MHz.

This transistor conforms to the automotive standard AEC-Q101.

The dimensions are height 1.1 mm, length 6.7 mm, and width 7.3 mm.

The maximum emitter-base voltage (VEBO) for this model is 6 volts.

This transistor has a typical NPN polarity.

Yes, this transistor is compliant with RoHS environmental standards.

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