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STMicroelectronics Type N-Channel IGBT 86A 650V 3-Pin TO-247 Through Hole STGWA50HP65FB2
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 15.9mm |
| Model | STGWA50HP65FB2 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | STG |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 86A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 272W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Trench gate field-stop structure optimized for conduction efficiency.
- Co-packaged with a protective antiparallel diode for enhanced performance.
- Designed for low saturation voltage and reduced switching energy.
- Operates at a maximum junction temperature of 175°C.
- Suitable for high-frequency switching at 1 MHz applications.
- Compact dimensions of 15.9 mm length, 21.1 mm width, and 5.1 mm height.
- RoHS compliant and manufactured in China.
Product Description
STMicroelectronics STGWA50HP65FB2 is a high-performance Type N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching in electronic circuits.
This IGBT features an advanced proprietary trench gate field-stop structure that improves conduction by reducing collector emitter saturation voltage, especially at low current levels. The device is integrated with a co-packaged antiparallel diode used for protection purposes which enhances switching performance and reduces energy loss during turn-off.
It supports a maximum continuous collector current of 86 amperes and a collector emitter voltage capability of up to 650 volts. The package type is TO-247 with three pins, suitable for through-hole mounting in a variety of industrial applications.
The STGWA50HP65FB2 is engineered for fast switching with a speed of 1 MHz and can operate reliably within a wide temperature range from -55°C to 175°C, making it ideal for demanding environments.
Its dimensions are 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height, providing a compact solution without compromising performance. The device is RoHS compliant and is manufactured in China, meeting stringent environmental and quality standards.
Advanced trench gate field-stop structure for better conduction efficiency. Co-packaged antiparallel diode for protection and performance. Low collector emitter saturation voltage reducing power losses. High maximum continuous current and voltage ratings.
Robust thermal and electrical characteristics for harsh conditions. Compact TO-247 package optimized for through-hole mounting. RoHS compliant ensuring environmentally safe manufacturing.
This Type N-Channel IGBT is extensively used in power electronics, industrial motor drives, and fast switching power supplies for its excellent switching performance and reliability. It is suitable for applications in industrial automation, manufacturing equipment, and power management systems.
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Frequently Asked Questions
The maximum continuous collector current of the STGWA50HP65FB2 is 86 amperes.
This IGBT can handle a maximum collector emitter voltage of up to 650 volts.
The dimensions of this IGBT are 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height.
The STGWA50HP65FB2 comes in a TO-247 package type, suitable for through-hole mounting.
This IGBT can operate at a maximum temperature of 175°C.
The minimum operating temperature for the STGWA50HP65FB2 is -55°C.
The maximum gate emitter voltage for the STGWA50HP65FB2 is 20 volts.
This model is a Type N-Channel Insulated Gate Bipolar Transistor (IGBT).
The maximum power dissipation for the STGWA50HP65FB2 is 272 watts.
The maximum collector emitter saturation voltage for this IGBT is 2 volts.
Yes, the STGWA50HP65FB2 is RoHS compliant, ensuring it meets environmental standards.
This IGBT is suitable for power electronics, industrial motor drives, and fast switching power supplies.
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