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Nexperia Type N-Channel MOSFET 120A 80V Enhancement Mode 3-Pin TO-220 PSMN3R5-80PS,127

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Nexperia Type N-Channel MOSFET 120A 80V Enhancement Mode 3-Pin TO-220 PSMN3R5-80PS,127

Name: Nexperia Type N-Channel MOSFET 120A 80V Enhancement Mode 3-Pin TO-220 PSMN3R5-80PS,127
Brand: Nexperia
SKU: 106580
Price: 1.89 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	Philippines
Brand	Nexperia
Height	16mm
Length	10.3mm
Model	PSMN3R5-80PS,127
Width	4.7mm
Mount Type	Through Hole
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	120A
Maximum Drain Source Voltage Vds	80V
Maximum Drain Source Resistance Rds	5.8mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	338W
Typical Gate Charge Qg @ Vgs	139nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Enhancement mode MOSFET designed for high efficiency and compact mounting.
Low maximum drain-source resistance of 5.8 milliohms ensures minimal conduction losses.
Maximum power dissipation rating of 338 watts for high power applications.
Robust construction supports operation from -55°C to 175°C.
Typical gate charge is 139 nanocoulombs at gate-source voltage.
Forward voltage of 1.2 volts enhances switching performance.
Packaged in a TO-220 through-hole 3-pin configuration for easy PCB integration.
Manufactured in the Philippines adhering to strict quality standards.

Product Description

Nexperia PSMN3R5-80PS,127 is a Type N-Channel Enhancement Mode MOSFET designed for high current and voltage power switching applications. It supports a maximum continuous drain current of 120 A and a drain-source voltage rating of 80 V, making it suitable for demanding industrial electronics.

This device features a low maximum drain-source resistance of 5.8 milliohms, optimizing efficiency and reducing heat generation during conduction. It supports robust power dissipation up to 338 watts, allowing reliable performance under heavy load conditions.

The MOSFET operates effectively over a wide temperature range from -55°C up to 175°C, ensuring stability in harsh environmental conditions encountered in industrial and automotive electronics. Its typical gate charge of 139 nanocoulombs at the specified gate voltage aids in fast switching performance.

The forward voltage of 1.2 V further increases the device's response speed and efficiency. Packaged in a 3-pin TO-220 through-hole format, it allows easy mounting on printed circuit boards and heat sinks for heat dissipation.

Manufactured in the Philippines under the reputable Nexperia brand, this MOSFET is appropriate for use in power supplies, motor control circuits, power conversion, and general industrial power management systems.

Enhancement mode N-Channel MOSFET with 120 A continuous current capacity. 80 V drain-source voltage rating for medium voltage applications. Low Rds(on) of 5.8 milliohms ensures high efficiency. Supports power dissipation up to 338 watts for demanding loads.

Wide operating temperature range from -55°C to 175°C. Typical gate charge of 139 nC for rapid switching. Forward voltage of 1.2 V for efficient conduction. 3-pin TO-220 package suitable for through-hole mounting. Manufactured in the Philippines ensuring strict quality standards.

This Nexperia MOSFET is well suited for use in industrial power management, motor drives, and energy-efficient switching applications. Browse similar semiconductor products and Nexperia MOSFETs on EnvMart.