onsemi NPN Darlington Transistor, 10 A 100 V, HFE 500, 3-Pin TO-247 TIP142G

onsemi TIP142G NPN Darlington Transistor is a robust semiconductor component designed to provide high amplification with a maximum continuous collector current of 10 A and collector emitter voltage up to 100 V. Packaged in a TO-247 3-pin through-hole configuration, this transistor is well suited for industrial, automotive, and power electronics applications where high gain and power dissipation of up to 125 W are necessary.

Designed with a DC current gain (hFE) of 500, the TIP142G ensures efficient signal amplification. Its ability to operate reliably across a temperature range from -65°C to 150°C makes it ideal for environments requiring durable performance under thermal stress.

The transistor’s characteristics include a low collector emitter saturation voltage of 2 V and a maximum emitter base voltage of 5 V, enhancing its switching capabilities in diverse circuits. The compact dimensions of 21.08 mm length and 5.3 mm height facilitate installation in limited space designs.

Typical applications include audio amplifiers, power regulators, and industrial control systems. The through-hole TO-247 packaging supports heat dissipation and provides mechanical stability in PCB assemblies.

This component complies with standard operating criteria for discrete semiconductors but does not include specific certifications. The TIP142G series is widely used in electronic power control and amplification modules across industrial and automotive sectors.

The transistor supports a maximum continuous collector current of 10 A. It has a maximum collector emitter voltage rating of 100 V. This device features a high DC current gain of 500 for increased amplification efficiency.

The package type is TO-247 with a 3-pin through-hole mount for easy integration. It can dissipate a maximum power of 125 W, suitable for heavy-duty circuits. Operating temperature ranges from -65°C to 150°C ensuring reliability in harsh environments.

The maximum emitter base voltage is rated at 5 V to protect internal junctions. Collector emitter saturation voltage is maintained at a low 2 V for optimal switching performance. The transistor features an NPN polarity, standard for common transistor applications.

The device measures 21.08 mm in length and 5.3 mm in height, compatible with compact designs. Explore more products in the Electronics & Electricals Semiconductor category on EnvMart for a wide range of high-quality transistors and semiconductor components.