STMicroelectronics N-Channel MDmesh M5 Type MOSFET, 650 V, 69 A, 400 W, TO-247 Package STW77N65M5

STMicroelectronics STW77N65M5 N-Channel MDmesh M5 Type MOSFET is a powerful semiconductor device designed for efficient switching in high power applications. With a 650 V drain-source voltage and 69 A continuous drain current capacity, it suits demanding power electronics such as PFC circuits, PWM topologies, and solar power inverters.

The MOSFET is housed in a robust TO-247 3-pin package supporting through-hole mounting, improving thermal handling and mechanical durability in industrial assemblies. Low on-state resistance and gate charge reduce losses, enhancing overall circuit energy efficiency.

This enhancement mode device operates reliably across a wide temperature range from subzero -55°C up to 150°C, ensuring stable performance in industrial, laboratory, and commercial power supply systems.

Additional electrical characteristics include a maximum power dissipation of 400 W and typical gate charge of 185 nC at gate-source voltage, enabling fast switching and safe operation. The device features a low drain-source resistance of 38 mΩ and a forward voltage rating of 1.5 V, minimizing conduction losses.

The MDmesh M5 series MOSFETs from STMicroelectronics are ideal for applications in power supplies, solar energy converters, electronic lighting controls, and other industrial power electronics that require compact, reliable, and energy-efficient solutions.

Capable of handling 69 A continuous drain current for heavy load applications. 650 V maximum drain-source voltage rating suitable for high voltage circuits. Low gate charge and on-state resistance enhance performance in PWM applications.

Robust TO-247 package with 3 pins designed for through-hole mounting. Wide operating temperature range supports harsh industrial environments. Explore the extensive product range of STMicroelectronics components and related semiconductor devices on EnvMart for your next industrial or laboratory project.