STMicroelectronics 3 A NPN Bipolar Transistor 60 V, 1.4 W Power Dissipation, 3-Pin SOT-89 2STF1360

STMicroelectronics 2STF1360 is a general purpose NPN bipolar transistor with a maximum DC collector current of 3 A and maximum collector emitter voltage of 60 V. It is packaged in a compact 3-pin SOT-89 surface mount package optimized for space-constrained industrial and electronic applications.

This transistor is ideal for high-speed switching and amplification tasks with a transition frequency of 130 MHz and a minimum DC current gain (hFE) of 80. With a maximum power dissipation of 1.4 W, the device can effectively handle moderate power loads in circuit designs.

The operating temperature range from -65°C up to 150°C makes the 2STF1360 suitable for use in rugged industrial environments and harsh conditions. Its electrical limits include a maximum collector base voltage of 80 V and a maximum emitter base voltage of 6 V, ensuring robust electrical performance during operation.

The 3-pin SOT-89 package provides a small form factor (6.6 mm length, 10.1 mm width, 2.4 mm height) suitable for automated surface mounting on printed circuit boards. This transistor supports applications such as power management, electronic switching, signal amplification, and driver stages in industrial systems, HVAC control electronics, and consumer electronic devices.

STMicroelectronics is renowned for quality semiconductor devices, and the 2STF1360 transistor exemplifies this with reliable performance and ease of integration in electronic design projects.

Maximum collector emitter voltage of 60 V ensures suitable operation in moderate voltage circuits. Power dissipation of 1.4 W supports efficient handling of heat during operation. High transition frequency of 130 MHz allows use in high-speed switching applications.

Designed with a compact SOT-89 package type ideal for surface mounting on PCBs. Operates reliably across a temperature range of -65°C to 150°C, suitable for harsh industrial environments. Minimum DC current gain (hFE) of 80 improves amplification efficiency in electronic circuits.

Single transistor configuration with NPN polarity ideal for general purpose amplification and switching. Small device dimensions with length 6.6 mm, width 10.1 mm, and height 2.4 mm facilitate compact designs. Maximum collector base voltage rated at 80 V and maximum emitter base voltage at 6 V provide robust electrical limits.

Pin count of 3 pins matches typical transistor interface for easy PCB integration.

This bipolar transistor suits industrial, laboratory, electronics manufacturing, power electronics, and HVAC system control use cases. For high-reliability semiconductor components, explore related STMicroelectronics Bipolar Transistors at EnvMart.