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Nexperia Digital Transistor 100 mA NPN + PNP 50 V 6-Pin SOT-363 PUMD2,125

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 2.2mm
Model PUMD2,125
Width 1.35mm
Mount Type Surface
Series PUMD2
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Dual Base

Key Features

  • This transistor has a maximum DC collector current of 100 mA.
  • It supports a collector-emitter voltage up to 50 V.
  • Built-in bias resistors simplify circuit design and reduce component count.
  • Available in a compact surface-mount SOT-363 plastic package.
  • Maximum power dissipation is rated at 300 mW.
  • Operating temperature range from -65°C to 150°C suits diverse applications.
  • Dual-base configuration integrates NPN and PNP transistors.
  • Pin count of 6 enables circuit versatility and easy mounting.

Product Description

Nexperia PUMD2,125 digital transistor offers a reliable 100 mA output current capability with both NPN and PNP transistor polarity types, packaged in a compact 6-pin SOT-363 surface-mount device. This component includes built-in bias resistors that simplify circuit design and reduce overall component count, thereby minimizing PCB space and assembly costs.

The transistor supports voltage ratings including 50 V maximum collector-emitter and collector-base voltages, along with a maximum emitter-base voltage of 10 V. It dissipates power up to 300 milliwatts and operates reliably across a temperature range from -65°C to 150°C, making it suitable for various industrial and electronic applications.

This dual-base transistor configuration is ideal for low current peripheral drivers and control of integrated circuit inputs, effectively replacing general-purpose transistors in digital circuits. Its surface mounting via the SOT-363 package facilitates automated assembly and efficient space utilization on printed circuit boards.

Maximum collector current 100 mA. Compact 6-pin SOT-363 surface-mount package. Built-in bias resistors lower component count. Dual-base transistor configuration with NPN and PNP types. Operating temperature from -65°C to 150°C.

Maximum power dissipation 300 mW. Voltage ratings: collector-emitter 50 V, collector-base 50 V, emitter-base 10 V. Simplifies low current peripheral driver and IC input control circuits.

This component is RoHS compliant, meeting environmental and safety standards for modern electronic manufacturing. It is widely used in industrial, electronic assembly, control, and automation applications.

Explore the Electronics & Electricals category on EnvMart for a wide range of semiconductor devices including Bipolar Transistors from leading brands like Nexperia.

Nexperia Digital Transistor 100 mA NPN + PNP 50 V 6-Pin SOT-363 PUMD2,125
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

This digital transistor supports a maximum collector-emitter voltage of 50 V.

The maximum power dissipation for this model is rated at 300 mW.

It operates reliably across a temperature range from -65°C to 150°C.

This model is packaged in a compact 6-pin SOT-363 surface-mount package.

The collector-base voltage is rated at 50 V, and the emitter-base voltage is rated at 10 V.

It features a dual-base configuration integrating both NPN and PNP types.

The built-in bias resistors simplify circuit design and reduce the overall component count, minimizing PCB space and assembly costs.

The height of this model is 1 mm, and the width is 1.35 mm.

Yes, this component is RoHS compliant, meeting environmental and safety standards for modern electronic manufacturing.

This transistor is suitable for low current peripheral drivers and control of integrated circuit inputs, effectively replacing general-purpose transistors in digital circuits.

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