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ROHM N-Channel MOSFET, 2A, 20V, 3-Pin TSMT Package, Enhancement Mode RUR020N02TL
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 0.95mm |
| Length | 3mm |
| Model | RUR020N02TL |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RUR020N02 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSMT |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 240mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 2nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 1.2V |
Key Features
- Type N enhancement mode MOSFET for advanced switching performance.
- Maximum continuous drain current of 2A ensures reliable power handling.
- Supports a drain-source voltage up to 20V for versatile circuit integration.
- Low Rds(on) resistance of 240mΩ minimizes energy loss and heating.
- Compact 3-pin TSMT surface-mounted package for easy PCB integration.
- Ideal for high-speed switching and efficient power conversion tasks.
- Maximum operating temperature of 150°C suitable for demanding environments.
- ROHM quality ensures durability and long service life.
Product Description
ROHM presents the RUR020N02TL, a high-quality N-channel enhancement mode MOSFET designed for efficient power switching in demanding electronic applications. Featuring a compact 3-pin TSMT package, this transistor is well-suited for space-constrained PCB layouts in industrial, commercial, and embedded systems.
The RUR020N02TL supports a maximum continuous drain current of 2A and a maximum drain-source voltage of 20V, providing reliable performance for low-voltage, high-current switching circuits. Its enhancement mode design ensures fast response and stable operation in pulse and logic-driven environments.
With a low drain-source resistance (Rds(on)) of just 240mΩ, this MOSFET minimizes power dissipation during operation, contributing to greater system efficiency and reduced heating. A maximum power dissipation of 1W and a typical gate charge of 2nC make it optimal for high-frequency switching tasks such as DC-DC converters, load switches, motor drivers, and power management applications.
The TSMT surface-mount package (length 3mm, width 1.8mm, height 0.95mm) enables secure placement and reliable connectivity. The device withstands gate-source voltages up to 10V and forward voltages up to 1.2V, expanding compatibility with a wide range of control circuits.
Type N-channel enhancement mode MOSFET for robust power switching. Allows maximum continuous drain current of 2A and drain-source voltage of 20V. Low Rds(on) of 240mΩ for efficient, low-loss operation. Surface-mount TSMT package with 3 pins for automated assembly.
Gate charge and voltage ratings tailored for fast switching and logic-level control. Thermal capability up to 150°C for challenging environments.
Applications extend to industrial controls, laboratory instruments, consumer electronics, and power regulation systems. The ROHM RUR020N02TL MOSFET is recommended for use in professional electronic development, circuit protection, and efficient energy management solutions.
Explore more N-channel MOSFETs and semiconductor components in the EnvMart electronics catalog. Discover ROHM's trusted solutions for high-performance circuits.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 2A, ensuring reliable power handling for various applications.
The RUR020N02TL can handle a maximum drain-source voltage of 20V, making it suitable for low-voltage applications.
It has a low drain-source resistance (Rds(on)) of 240mΩ, which minimizes energy loss and heating during operation.
This MOSFET comes in a compact 3-pin TSMT package with dimensions of 3mm in length, 1.8mm in width, and 0.95mm in height.
The maximum operating temperature for the RUR020N02TL is 150°C, allowing it to function in demanding environments.
This model is ideal for high-speed switching tasks such as DC-DC converters, load switches, motor drivers, and power management applications.
The typical gate charge (Qg) at Vgs is 2nC, which is optimized for fast switching and efficient control.
It has a maximum power dissipation rating of 1W, which supports its use in various electronic circuits.
The forward voltage (Vf) for the RUR020N02TL is rated at 1.2V, expanding its compatibility with control circuits.
This model can withstand a maximum gate-source voltage of 10V, ensuring compatibility with various control systems.
It features an N-channel enhancement mode, which is designed for efficient power switching applications.
The RUR020N02TL is designed for surface mounting, which facilitates easy integration into PCB layouts.
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