ROHM N-Channel MOSFET 200 mA 50 V, Enhancement, SOT-323 Package, 3-Pin RU1J002YN

Featuring a maximum drain current of 200 mA and a maximum drain-source voltage of 50 V, this enhancement mode MOSFET delivers high performance in industrial, automotive, and consumer electronics setups.

The device comes in a compact SOT-323 surface-mount package with three functional pins, streamlining PCB layout for compact and high-density designs. Its low maximum drain source resistance of 9 Ω assures minimal energy losses and efficient conduction, while a rated power dissipation of 150 mW supports thermal stability under continual use.

Maximum continuous drain current of 200 mA ensures reliable handling of moderate loads. Drain-source voltage capacity up to 50 V makes it suitable for a wide range of applications. Enhancement channel mode allows for effective and energy-saving switching.

Three-pin SOT-323 surface-mount package is ideal for automated assembly and high-density boards. Gate-source voltage up to 8 V provides operational flexibility. Wide temperature range enables operation in harsh industrial environments.

Compatible with a variety of electronics projects in manufacturing, laboratory, and commercial applications.

Its forward voltage of 1.2 V and operating temperature from -55°C to 150°C make the RU1J002YN robust for integration into demanding circuit designs, such as industrial control equipment, laboratory electronics, or automotive subsystems.

This MOSFET enables designers to achieve efficient switching, strong amplification, and broad voltage handling capabilities for professional-grade electronics. Whether used in discrete semiconductor designs or advanced PCB assemblies, the RU1J002YN offers both performance and reliability.

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