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ROHM Type N, Type P-Channel MOSFET 7A 60V Enhancement 8-Pin SOP SH8MC5TB1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 5.2mm |
| Length | 4.05mm |
| Model | SH8MC5TB1 |
| Width | 1.75mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 7.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features both Type N and Type P channels in a single device.
- Maximum continuous drain current is 7A for robust performance.
- Supports drain-source voltages up to 60V for versatile uses.
- Packaged in a compact 8-pin SOP form factor for surface mounting.
- Low on-resistance of 33mΩ improves power efficiency.
- Operates in enhancement mode, ideal for fast switching.
- Suitable for temperatures from -55°C to 150°C, ensuring reliability in various environments.
- Max gate-source voltage of 20V allows broad interfacing options.
Product Description
ROHM SH8MC5TB1 is a dual Type N and Type P-Channel MOSFET designed for high-efficiency switching and power control in modern electronic systems. Combining two 60V MOSFETs in a single surface-mount SOP-8 package, this device offers robust current handling with a maximum continuous drain current of 7A, making it ideal for demanding circuit designs.
With a compact 8-pin SOP package, the SH8MC5TB1 is engineered for space-constrained assemblies while maintaining excellent performance parameters including low 33mΩ Rds(on) and a maximum power dissipation of 2W. The part operates in enhancement mode and supports a broad range of control voltages thanks to its ±20V gate-source rating.
This MOSFET features advanced construction such as Pb-free and halogen-free plating for environmental compliance. The device is rated for operation over a wide temperature range from -55°C to 150°C, making it reliable for both industrial and commercial applications. It is suitable for switching, power supply, and motor control applications where efficient high-speed switching is necessary.
Type N and Type P-Channel dual MOSFET for flexible switching topologies. Rated for 60V drain-source voltage, 7A continuous current, and 2W power dissipation. 8-pin SOP surface-mount design for automated high-volume manufacturing.
33mΩ maximum drain-source resistance and 1.2V forward voltage for low-loss operation. Wide temperature operation supports use in both indoor and outdoor environments. Pb-free and halogen-free, meeting modern environmental and safety standards.
Commonly used in power management, switching regulators, battery-powered devices, industrial automation, and automotive electronics, the ROHM SH8MC5TB1 delivers reliable, high-speed switching performance. This product meets the needs of manufacturers and designers looking for compact, versatile, and eco-friendly solutions in electronics and electrical engineering sectors.
Explore more MOSFET and semiconductor solutions in the EnvMart Electronics & Electricals category to find components for your next high-performance electronic design.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7A.
This MOSFET supports a maximum drain-source voltage of 60V.
It is packaged in an 8-pin SOP (Small Outline Package) format for surface mounting.
The operating temperature range for this device is from -55°C to 150°C.
The maximum power dissipation for this MOSFET is 2W.
The maximum drain-source resistance (Rds(on)) is 33mΩ, which helps improve power efficiency.
This model features both Type N and Type P channels in a single device.
The maximum gate-source voltage for this device is ±20V.
It is suitable for power management, switching regulators, battery-powered devices, industrial automation, and automotive electronics.
The dimensions of this model are 4.05mm in length, 1.75mm in width, and 5.2mm in height.
The typical gate charge (Qg) at Vgs is 7.6nC.
Yes, it features Pb-free and halogen-free plating, meeting modern environmental compliance standards.
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