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Infineon IRSM005-301MH Half Bridge MOSFET Gate Driver, 30A, 20V Max, 27-Pin PQFN Package
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 8.1mm |
| Model | IRSM005-301MH |
| Width | 7.1mm |
| Mount Type | Surface |
| Series | IRSM005-301MH |
| Output Current | 30A |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 70ns |
| Standards/Approvals | RoHS |
| Pin Count | 27 |
| Maximum Supply Voltage | 20V |
| Minimum Supply Voltage | 10V |
| Number of Drivers | 1 |
| Fall Time | 35ns |
| Driver Type | MOSFET |
| Low on-resistance HEXFETs | 16 mΩ typ |
Key Features
- Provides reliable half bridge power stage with integrated MOSFET gate driver functionality.
- Handles output current up to 30A and operation up to 20V supply voltage, suitable for demanding designs.
- Low thermal resistance PQFN package optimizes performance in compact layouts.
- Matched propagation delay and low on-resistance HEXFETs (16 mΩ typ.) for improved efficiency.
- Ideal for advanced motor drives, DC-AC and DC-DC converter circuits, and other industrial applications.
- Includes under-voltage lockout protection with independent gate drive phases.
- Supports a wide operating temperature range from -40°C to 150°C ensuring robust performance in harsh environments.
- RoHS compliant and designed for surface mount assembly.
Product Description
The Infineon IRSM005-301MH is an advanced half bridge power stage featuring an integrated MOSFET gate driver designed for use in demanding low voltage and high power density applications. With a 27-pin PQFN package measuring just 8.1 mm × 7.1 mm × 1 mm, this device provides a compact solution for designers striving to maximize board efficiency and minimize thermal footprint.
This gate driver supports an output current up to 30A and a supply voltage range of 10V to 20V, making it ideal for applications such as advanced motor drives, DC-AC inverters, and DC-DC converters in industrial, automation, and power management sectors. The device offers matched propagation delay, a low on-resistance HEXFET output (16 mΩ typ.), and low package thermal resistance, ensuring reliable and efficient operation even at high switching frequencies.
For enhanced safety and control, the IRSM005-301MH includes features such as under-voltage lockout on both the Vcc and Vbs rails, and independent gate drive in phase with the logic input. The device is designed to be RoHS compliant, supporting modern environmental and manufacturing standards.
Provides reliable half bridge power stage with integrated MOSFET gate driver functionality. Handles output current up to 30A and operation up to 20V supply voltage, suitable for demanding designs. Low thermal resistance PQFN package optimizes performance in compact layouts.
Matched propagation delay and low on-resistance HEXFETs (16 mΩ typ.) for improved efficiency. Ideal for advanced motor drives, DC-AC and DC-DC converter circuits, and other industrial applications. Includes under-voltage lockout protection with independent gate drive phases.
Supports a wide operating temperature range from -40°C to 150°C ensuring robust performance in harsh environments. RoHS compliant and designed for surface mount assembly.
Common applications include industrial motor drives, automation controls, power conversion systems, and compact power modules requiring reliable high-current switching. Its compact size also makes it suitable for space-constrained environments like precision laboratory equipment and integrated test and measurement systems.
Explore more Infineon MOSFET Gate Drivers and power management ICs to meet your design challenges on EnvMart’s comprehensive electronics platform.
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Frequently Asked Questions
This model can handle an output current of up to 30A.
It operates within a supply voltage range of 10V to 20V.
The device has dimensions of 8.1 mm in length, 7.1 mm in width, and a height of 1 mm.
It comes in a 27-pin PQFN package designed for surface mount assembly.
The maximum operating temperature is 150°C.
It can operate in temperatures as low as -40°C.
It includes under-voltage lockout protection on both the Vcc and Vbs rails, along with independent gate drive phases.
The rise time is specified at 70ns.
The fall time is 35ns.
The low on-resistance HEXFETs have a typical value of 16 mΩ.
It is ideal for advanced motor drives, DC-AC inverters, and DC-DC converters in industrial applications.
Yes, it is RoHS compliant, adhering to modern environmental and manufacturing standards.
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