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STMicroelectronics NPN Bipolar Transistor BD139-16, 3A, 80V, Through Hole, SOT-32 Package

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STMicroelectronics NPN Bipolar Transistor BD139-16, 3A, 80V, Through Hole, SOT-32 Package

Name: STMicroelectronics NPN Bipolar Transistor BD139-16, 3A, 80V, Through Hole, SOT-32 Package
Brand: STMicroelectronics
SKU: 87882
Price: 0.23 USD
Availability: InStock

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Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	2.7mm
Length	10.8mm
Model	BD139-16
Width	7.8mm
Mount Type	Through Hole
Series	BD139
Maximum Operating Temperature	150°C
Package Type	SOT-32
Minimum Operating Temperature	0°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	80V
Minimum DC Current Gain hFE	25
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	1.25W
Maximum DC Collector Current Idc	3A
Transistor Configuration	Single
STMicroelectronics BD140-16 PNP Transistor, -1.5 A, -80 V, 3-Pin SOT-32Brand	STMicroelectronics

Key Features

Supports a maximum DC collector current of 3A, ideal for medium-power circuits.
Provides a maximum collector-emitter voltage of 80V for reliable performance in demanding environments.
SOT-32 package with through-hole mounting for sturdy board-level installation.
Single NPN transistor configuration for consistent operation and integration.
Minimum DC current gain hFE of 25, ensuring efficient amplification.
Maximum power dissipation of 1.25W for thermal stability.
Operating temperature range from 0°C to 150°C for versatile applications.
Pin count of 3, simplifying circuit design and layout.

Product Description

The STMicroelectronics BD139-16 is a single NPN bipolar transistor engineered for general purpose amplification and switching in a variety of electronic circuits. Offering a robust maximum DC collector current of 3A and a collector-emitter voltage of up to 80V, this device meets the requirements for medium power applications in industrial, commercial, and laboratory environments.

This transistor utilizes a SOT-32 package format with through-hole mounting, ensuring reliable physical and electrical connections on printed circuit boards. The three-pin design streamlines integration into schematic layouts and assembly, making it suitable for designers aiming for durability and straightforward deployment.

The BD139-16 features a minimum DC current gain hFE of 25, providing efficient signal amplification and stable switching. With maximum power dissipation capability of 1.25W, it maintains performance and thermal stability during prolonged service periods. Operational within a wide temperature range from 0°C to 150°C, it is adaptable to both controlled laboratory conditions and harsh industrial settings.

Key technical characteristics include a maximum collector base voltage of 80V, maximum emitter base voltage of 5V, and a transistor polarity of NPN - attributes that support accurate signal control and switching reliability. The product is part of the BD139 series, recognized for general purpose versatility across amplifier and switching circuits. It is not rated for automotive standards and has no associated standards or approvals referenced in evidence.

Industrial applications include amplifier stages, power signal switching, drive circuits for relays, power supplies, and interface circuitry in automation equipment. The transistor can be routinely used in manufacturing, test and measurement, R&D setups, and commercial electronics assembly, supporting robust and maintainable electronic designs.

Browse additional NPN and PNP bipolar transistors under the Bipolar Transistors category - or explore the full STMicroelectronics portfolio for compatible products and application-specific solutions with EnvMart.