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Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V, Enhancement Mode, 3-Pin TO-92 VP0106
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | VP0106 |
| Mount Type | Through Hole |
| Series | VP0106 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.8V |
Key Features
- Vertical DMOS structure delivers high power handling and high input impedance.
- Supertex silicon-gate process ensures thermal stability and prevents thermal runaway.
- Maximum drain-source resistance of 8 milliohms for efficient conduction.
- Supports operation from -55°C to 150°C for robust performance.
- Through-hole mount with a compact TO-92 package and 3 pins.
- Maximum power dissipation rating of 1.6 watts for reliable operation.
- Forward voltage of 1.8 V and gate-source voltage up to 20 V.
- Ideal for switching and amplifying applications requiring fast switching speeds.
Product Description
Microchip VP0106 Type P-Channel MOSFET VP0106 is an enhancement-mode, normally-off transistor, manufactured using a vertical DMOS structure and Supertex's silicon-gate process. This device combines the power handling capability of bipolar transistors with the high input impedance and thermal stability of MOS devices, making it free from thermal runaway and secondary breakdown.
The MOSFET is rated for a maximum continuous drain current of 140 A and a maximum drain-source voltage of 30 V. It operates in enhancement mode and is housed in a 3-pin TO-92 through-hole package for easy PCB integration.
With a maximum drain-source resistance of 8 milliohms and a maximum power dissipation of 1.6 watts, this MOSFET offers efficient power management. It supports a wide temperature range from -55°C to 150°C, making it suitable for industrial and commercial applications.
The device features a maximum gate-source voltage of 20 V and a forward voltage of 1.8 V, ensuring robust switching performance. Its integral source-drain diode and low input capacitance enable fast switching speeds and ease of paralleling for high current applications.
This MOSFET is ideal for applications in power switching, motor control, load switching, and amplification in electronic circuits requiring reliable, low-threshold, high-current capability with excellent thermal stability.
Vertical DMOS for enhanced power handling and stability. High input impedance reduces drive requirements. Fast switching speeds enable efficient power conversion. Thermally stable with positive temperature coefficient. Compact TO-92 package with through-hole mount for easy assembly.
Wide operating temperature range from -55°C to 150°C. Robust performance with low on-resistance of 8 milliohms. Integral diode protects against inductive load effects. Suitable for industrial, laboratory, and consumer electronics applications.
Explore the extensive range of semiconductor components including MOSFETs at EnvMart for your power electronics and control needs.
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Frequently Asked Questions
The maximum continuous drain current for the VP0106 MOSFET is 140 A.
The maximum drain-source voltage rating for the VP0106 is 30 V.
This model operates within a temperature range of -55°C to 150°C.
The maximum power dissipation rating for the VP0106 is 1.6 watts.
The VP0106 comes in a compact TO-92 package with a through-hole mount.
The maximum gate-source voltage for this model is 20 V.
The forward voltage for the VP0106 is 1.8 V.
The VP0106 has a pin count of 3.
The maximum drain-source resistance for the VP0106 is 8 milliohms.
The VP0106 is suitable for applications in power switching, motor control, load switching, and amplification in electronic circuits.
The VP0106 features a P-channel type.
The VP0106 is manufactured using a vertical DMOS structure and Supertex's silicon-gate process.
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