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ROHM Type P, Type N-Channel MOSFET, 5 A Drain Current, 40 V Drain Source Voltage, Enhancement Mode, 8-Pin TSMT-8 QH8MB5TCR

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 2.9mm
Length 3.1mm
Model QH8MB5TCR
Width 0.85mm
Mount Type Surface
Series QH8MB5
Maximum Operating Temperature 150°C
Package Type TSMT-8
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 5A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 44mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 3.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Dual N channel and P channel MOSFET designed for 24 V input equipment applications.
  • Supports factory automation equipment and base station motor usage.
  • Optimized combination of N channel and P channel MOSFET reduces design effort.
  • Low on-resistance ensures efficient power consumption.
  • Compact surface mount 8-pin TSMT-8 package with minimal height and length.
  • Operational temperature range from -55°C to 150°C suitable for industrial environments.
  • Typical gate charge of 3.5 nC for fast switching performance.
  • RoHS compliant with lead-free plating and halogen free construction.

Product Description

ROHM QH8MB5TCR is a dual MOSFET device with Type P and Type N channel configuration, offering a maximum drain current of 5 A and can withstand up to 40 V across drain and source. It features an enhancement mode channel and is housed in a low-profile 8-pin TSMT-8 surface mount package, making it ideal for space-sensitive industrial and electronic applications.

This MOSFET series is specifically designed for 24 V input equipment such as factory automation systems and motors in base stations, providing an optimized combination of N channel and P channel MOSFETs to reduce design complexity and power consumption. Its low on-resistance characteristic improves energy efficiency, contributing to lower operational costs in industrial environments.

The device operates effectively across a broad temperature range from -55°C minimum to a maximum of 150°C, supporting harsh industrial conditions. With a typical gate charge (Qg) of 3.5 nC at gate voltage, the MOSFET supports fast switching speeds suitable for PWM and power regulation circuits.

The QH8MB5TCR package dimensions are compact with a height of 2.9 mm, length of 3.1 mm, and width of 0.85 mm, facilitating high-density PCB designs. The device is Pb-free and RoHS compliant, aligned with modern environmental and safety standards for electronics manufacturing.

Its maximum power dissipation rating is 1.5 W, allowing reliable operation under moderate loads. The MOSFET forward voltage is 1.2 V, and the maximum gate source voltage is 20 V, ensuring robustness in typical industrial power control applications.

This product is well suited for a variety of industrial, laboratory, and commercial electronic assemblies requiring efficient power switching and amplification with minimal footprint. Applications include motor drives, power management modules, and base station equipment.

Dual-channel Type P and Type N MOSFETs integrated for complementary switching. Compact 8-pin TSMT-8 surface mount package to maximize PCB space utilization. Supports 5 A continuous drain current with low ON resistance. Wide operating temperature range suitable for industrial conditions.

Lead-free plated to comply with environmental regulations. Fast switching with low typical gate charge. RoHS and halogen-free certified construction. Designed for 24 V systems commonly used in factory automation and base station motors.

Maximum power dissipation at 1.5 W for thermal reliability. Explore EnvMart’s comprehensive range of semiconductors and MOSFET devices optimized for industrial and electronic system integration.

ROHM Type P, Type N-Channel MOSFET, 5 A Drain Current, 40 V Drain Source Voltage, Enhancement Mode, 8-Pin TSMT-8 QH8MB5TCR
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Frequently Asked Questions

The maximum continuous drain current for this model is 5 A.

It can withstand a maximum drain-source voltage of 40 V.

The typical gate charge at gate voltage is 3.5 nC, which supports fast switching performance.

This device operates effectively within a temperature range from -55°C to 150°C.

The dimensions of the TSMT-8 package are 2.9 mm in height, 3.1 mm in length, and 0.85 mm in width.

It features a dual-channel configuration with both Type P and Type N channels.

The maximum power dissipation rating is 1.5 W, allowing reliable operation under moderate loads.

The forward voltage for this MOSFET is 1.2 V.

The maximum gate-source voltage is 20 V.

This MOSFET is designed for 24 V input equipment applications, such as factory automation systems and base station motors.

It uses a surface mount type, specifically in an 8-pin TSMT-8 configuration.

Yes, it is RoHS compliant and features lead-free plating and halogen-free construction.

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