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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 2.9mm |
| Length | 3.1mm |
| Model | QH8MB5TCR |
| Width | 0.85mm |
| Mount Type | Surface |
| Series | QH8MB5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSMT-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 44mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
ROHM QH8MB5TCR is a dual MOSFET device with Type P and Type N channel configuration, offering a maximum drain current of 5 A and can withstand up to 40 V across drain and source. It features an enhancement mode channel and is housed in a low-profile 8-pin TSMT-8 surface mount package, making it ideal for space-sensitive industrial and electronic applications.
This MOSFET series is specifically designed for 24 V input equipment such as factory automation systems and motors in base stations, providing an optimized combination of N channel and P channel MOSFETs to reduce design complexity and power consumption. Its low on-resistance characteristic improves energy efficiency, contributing to lower operational costs in industrial environments.
The device operates effectively across a broad temperature range from -55°C minimum to a maximum of 150°C, supporting harsh industrial conditions. With a typical gate charge (Qg) of 3.5 nC at gate voltage, the MOSFET supports fast switching speeds suitable for PWM and power regulation circuits.
The QH8MB5TCR package dimensions are compact with a height of 2.9 mm, length of 3.1 mm, and width of 0.85 mm, facilitating high-density PCB designs. The device is Pb-free and RoHS compliant, aligned with modern environmental and safety standards for electronics manufacturing.
Its maximum power dissipation rating is 1.5 W, allowing reliable operation under moderate loads. The MOSFET forward voltage is 1.2 V, and the maximum gate source voltage is 20 V, ensuring robustness in typical industrial power control applications.
This product is well suited for a variety of industrial, laboratory, and commercial electronic assemblies requiring efficient power switching and amplification with minimal footprint. Applications include motor drives, power management modules, and base station equipment.
Dual-channel Type P and Type N MOSFETs integrated for complementary switching. Compact 8-pin TSMT-8 surface mount package to maximize PCB space utilization. Supports 5 A continuous drain current with low ON resistance. Wide operating temperature range suitable for industrial conditions.
Lead-free plated to comply with environmental regulations. Fast switching with low typical gate charge. RoHS and halogen-free certified construction. Designed for 24 V systems commonly used in factory automation and base station motors.
Maximum power dissipation at 1.5 W for thermal reliability. Explore EnvMart’s comprehensive range of semiconductors and MOSFET devices optimized for industrial and electronic system integration.
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